Study of single grain decagonal Al-Ni-Co quasicrystal surface

2020 ◽  
Author(s):  
Vipin Kumar Singh ◽  
Sudipta Roy Barman
Keyword(s):  
Single Grain

Short Channel Poly-Si TFT with Single Grain Boundary by Excimer Laser Annealing on Al-masked a-Si Layer

2002 ◽  
Vol 715 ◽  
Author(s):  
Sang-Hoon Jung ◽  
Jae-Hoon Lee ◽  
Min-Koo Han
Keyword(s):  
Grain Boundary ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Silicon Layer ◽  
Silicon Thin Film ◽  
Short Channel ◽  
Excimer Laser Annealing ◽  
Boundary Density ◽  
Single Grain

AbstractA short channel polycrystalline silicon thin film transistor (poly-Si TFT), which has single grain boundary in the center of channel, is reported. The reported poly-Si TFT employs lateral grain growth method through aluminum patterns, which acts as a selective beam mask and a lateral heat sink during the laser irradiation, on an amorphous silicon layer. The electrical characteristics of the proposed poly-Si TFT have been considerably improved due to grain boundary density lowered. The reported short channel poly-Si TFT with single grain boundary exhibits high mobility as 222 cm2/Vsec and large on/off current ratio exceeding 1 × 108.

THE MEDICINE HAT BLOCK AND THE ASSEMBLY OF LAURENTIA: NEW INTERPRETATIONS FROM SINGLE-GRAIN ZIRCON ANALYSES

2019 ◽  
Author(s):  
Jennifer Gifford ◽  
◽  
Blake Oswell LaDouceur ◽  
William J. Davis ◽  
Shawn J. Malone
Keyword(s):  
Single Grain

Grain Boundary Atomic Structures in SrTiO3 and BaTiO3

2007 ◽  
Vol 558-559 ◽  
pp. 851-856 ◽  
Author(s):  
Takahisa Yamamoto ◽  
Teruyasu Mizoguchi ◽  
S.Y. Choi ◽  
Yukio Sato ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Annealing Temperature ◽  
Unit Length ◽  
Rate Dependency ◽  
Atomic Structures ◽  
Current Voltage ◽  
Single Grain ◽  
Current Voltage Characteristics ◽  
Theoretical Results

SrTiO3 bicrystals with various types of grain boundaries were prepared by joining two single crystals at high temperature. By using the bicrystals, we examined their current-voltage characteristics across single grain boundaries from a viewpoint of point defect segregation in the vicinity of the grain boundaries. Current-voltage property in SrTiO3 bicrystals was confirmed to show a cooling rate dependency from annealing temperature, indicating that cation vacancies accumulate due to grain boundary oxidation. The theoretical results obtained by ab-initio calculation clearly showed that the formation energy of Sr vacancies is the lowest comparing with Ti and O vacancies in oxidized atomosphere. The formation of a double Schottky barrier (DSB) in n-type SrTiO3 is considered to be closely related to the accumulation of the charged Sr vacancies. Meanwhile, by using three types of low angle boundaries, the excess charges related to one grain boundary dislocation par unit length was estimated. In this study, we summarized our results obtained in our group.

Behavior of silver substitution in single-grain TSMG YBCO bulk superconductor

2010 ◽  
Vol 470 (2) ◽  
pp. 155-158 ◽  
Author(s):  
P. Diko ◽  
V. Antal ◽  
M. Kaňuchová ◽  
M. Jirsa ◽  
K. Jurek
Keyword(s):  
Bulk Superconductor ◽  
Ybco Bulk ◽  
Single Grain

U–Pb geochronology of Cretaceous magmatism on Svalbard and Franz Josef Land, Barents Sea Large Igneous Province

2013 ◽  
Vol 150 (6) ◽  
pp. 1127-1135 ◽  
Author(s):  
FERNANDO CORFU ◽  
STÉPHANE POLTEAU ◽  
SVERRE PLANKE ◽  
JAN INGE FALEIDE ◽  
HENRIK SVENSEN ◽  
...  
Keyword(s):  
Thermal Ionization Mass Spectrometry ◽  
Barents Sea ◽  
Large Igneous Province ◽  
The Arctic ◽  
Ionization Mass ◽  
Franz Josef Land ◽  
Igneous Province ◽  
Stratigraphic Record ◽  
Single Grain ◽  
Cretaceous Magmatism

AbstractThe opening of the Arctic oceanic basins in the Mesozoic and Cenozoic proceeded in steps, with episodes of magmatism and sedimentation marking specific stages in this development. In addition to the stratigraphic record provided by sediments and fossils, the intrusive and extrusive rocks yield important information on this evolution. This study has determined the ages of mafic sills and a felsic tuff in Svalbard and Franz Josef Land using the isotope dilution thermal ionization mass spectrometry (ID-TIMS) U–Pb method on zircon, baddeleyite, titanite and rutile. The results indicate crystallization of the Diabasodden sill at 124.5 ± 0.2 Ma and the Linnévatn sill at 124.7 ± 0.3 Ma, the latter also containing slightly younger secondary titanite with an age of 123.9 ± 0.3 Ma. A bentonite in the Helvetiafjellet Formation, also on Svalbard, has an age of 123.3 ± 0.2 Ma. Zircon in mafic sills intersected by drill cores in Franz Josef Land indicate an age of 122.7 Ma for a thick sill on Severnaya Island and a single grain age of ≥122.2 ± 1.1 Ma for a thinner sill on Nagurskaya Island. These data emphasize the importance and relatively short-lived nature of the Cretaceous magmatic event in the region.

Removal Mechanism of Titanium Alloy Ti6Al4V Based on Single-Grain High Speed Grinding Test

2011 ◽  
Vol 487 ◽  
pp. 39-43 ◽  
Author(s):  
L. Tian ◽  
Yu Can Fu ◽  
W.F. Ding ◽  
Jiu Hua Xu ◽  
H.H. Su
Keyword(s):  
Titanium Alloy ◽  
High Speed ◽  
Chip Thickness ◽  
Wheel Speed ◽  
High Speed Grinding ◽  
Tc4 Alloy ◽  
Grinding Mechanism ◽  
Single Grain ◽  
On Chip ◽  
Titanium Alloy Ti6al4v

Single-grain grinding test plays an important part in studying the high speed grinding mechanism of materials. In this paper, a new method and experiment system for high speed grinding test with single CBN grain are presented. In order to study the high speed grinding mechanism of TC4 alloy, the chips and grooves were obtained under different wheel speed and corresponding maximum undeformed chip thickness. Results showed that the effects of wheel speed and chip thickness on chip formation become obvious. The chips were characterized by crack and segment band feature like the cutting segmented chips of titanium alloy Ti6Al4V.

Single-Grain Boundaries in PTC Resistors

1996 ◽  
Vol 79 (4) ◽  
pp. 997-1001 ◽  
Author(s):  
Makoto Kuwabara ◽  
Ken-ichiro Morimo ◽  
Tatsuya Matsunaga
Keyword(s):  
Grain Boundaries ◽  
Single Grain
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