Synthesis and characterization of bulk Si–Ti nanocomposite and comparisons of approaches for enhanced thermoelectric properties in nanocomposites composed of Si and various metal silicides

2020 ◽  
Vol 128 (9) ◽  
pp. 095101
Author(s):  
Sora-at Tanusilp ◽  
Yuji Ohishi ◽  
Hiroaki Muta ◽  
Ken Kurosaki
Keyword(s):  
Thermoelectric Properties ◽  
Synthesis And Characterization ◽  
Metal Silicides

scholarly journals Non-equilibrium synthesis and characterization of n-type Bi2Te2.7Se0.3 thermoelectric material prepared by rapid laser melting and solidification

RSC Advances ◽  
2017 ◽  
Vol 7 (35) ◽  
pp. 21439-21445 ◽  
Author(s):  
Yu Mao ◽  
Yonggao Yan ◽  
Keping Wu ◽  
Hongyao Xie ◽  
Zekun Xiu ◽  
...  
Keyword(s):  
3D Printing ◽  
Thermoelectric Properties ◽  
Thermoelectric Material ◽  
Synthesis And Characterization ◽  
Laser Melting ◽  
Melting And Solidification ◽  
Non Equilibrium

N-type Bi2Te2.7Se0.3 material fabricated by non-equilibrium laser 3D printing exhibits comparable thermoelectric properties to that of the commercially available material.

Synthesis and characterization of Mg2Si/Si nanocomposites prepared from MgH2 and silicon, and their thermoelectric properties

2012 ◽  
Vol 22 (47) ◽  
pp. 24805 ◽  
Author(s):  
Tanghong Yi ◽  
Shaoping Chen ◽  
Shawn Li ◽  
Hao Yang ◽  
Sabah Bux ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Synthesis And Characterization

Investigations Of Solid Solutions Of CsBi4Te6

2000 ◽  
Vol 626 ◽  
Author(s):  
Duck-Young Chung ◽  
Tim P. Hogan ◽  
Nishant Ghelani ◽  
Paul W. Brazis ◽  
Melissa A. Lane ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Solid Solutions ◽  
Synthesis And Characterization ◽  
Structural Investigations ◽  
X Ray ◽  
As Doping

ABSTRACTResults on the synthesis and characterization of the solid solutions CsBi4-xSbxTe6, CsBi4Te6-ySey, as well as doping experiments on CsBi4Te6 are reported. We report X-ray structural investigations showing that the Sb or Se atoms in these compounds are not uniformly distributed in the lattice but show preferential occupation of specific crystallographic sites. Thermoelectric properties of selected systems are presented.

Large-Scale Synthesis and Characterization of the Size-Dependent Thermoelectric Properties of Uniformly Sized Bismuth Nanocrystals

2010 ◽  
Vol 50 (6) ◽  
pp. 1363-1366 ◽  
Author(s):  
Jae Sung Son ◽  
Kunsu Park ◽  
Mi-Kyung Han ◽  
Chanyoung Kang ◽  
Sung-Geun Park ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Large Scale ◽  
Synthesis And Characterization ◽  
Size Dependent ◽  
Large Scale Synthesis

scholarly journals Si-Based Materials for Thermoelectric Applications

Materials ◽  
2019 ◽  
Vol 12 (12) ◽  
pp. 1943 ◽  
Author(s):  
Sora-at Tanusilp ◽  
Ken Kurosaki
Keyword(s):  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Melt Spinning ◽  
Production Costs ◽  
Synthesis And Characterization ◽  
Thermoelectric Figure ◽  
Metal Silicides ◽  
High Power Factor ◽  
Low Toxicity

Si-based thermoelectric materials have attracted attention in recent decades with their advantages of low toxicity, low production costs, and high stability. Here, we report recent achievements on the synthesis and characterization of Si-based thermoelectric materials. In the first part, we show that bulk Si synthesized through a natural nanostructuring method exhibits an exceptionally high thermoelectric figure of merit zT value of 0.6 at 1050 K. In the second part, we show the synthesis and characterization of nanocomposites of Si and metal silicides including CrSi2, CoSi2, TiSi2, and VSi2. These are synthesized by the rapid-solidification melt-spinning (MS) technique. Through MS, we confirm that silicide precipitates are dispersed homogenously in the Si matrix with desired nanoscale sizes. In the final part, we show a promising new metal silicide of YbSi2 for thermoelectrics, which exhibits an exceptionally high power factor at room temperature.

Large-Scale Synthesis and Characterization of the Size-Dependent Thermoelectric Properties of Uniformly Sized Bismuth Nanocrystals

2010 ◽  
Vol 123 (6) ◽  
pp. 1399-1402 ◽  
Author(s):  
Jae Sung Son ◽  
Kunsu Park ◽  
Mi-Kyung Han ◽  
Chanyoung Kang ◽  
Sung-Geun Park ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Large Scale ◽  
Synthesis And Characterization ◽  
Size Dependent ◽  
Large Scale Synthesis

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

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