Evaluating interface roughness and micro-fluctuation potential of InAs/GaSb superlattices by mid-infrared magnetophotoluminescence

2020 ◽  
Vol 117 (8) ◽  
pp. 081104
Author(s):  
Xiren Chen ◽  
Zhicheng Xu ◽  
Yi Zhou ◽  
Liangqing Zhu ◽  
Jianxin Chen ◽  
...  
Keyword(s):  
Interface Roughness ◽  
Mid Infrared ◽  
Fluctuation Potential

Importance of interface roughness induced intersubband scattering in mid-infrared quantum cascade lasers

2012 ◽  
Vol 101 (17) ◽  
pp. 171117 ◽  
Author(s):  
YenTing Chiu ◽  
Yamac Dikmelik ◽  
Peter Q. Liu ◽  
Nyan L. Aung ◽  
Jacob B. Khurgin ◽  
...  
Keyword(s):  
Quantum Cascade Lasers ◽  
Interface Roughness ◽  
Mid Infrared ◽  
Quantum Cascade ◽  
Cascade Lasers

TEM study of Cosi2 formation via annealing of Co-Ti bilayers on Si

1995 ◽  
Vol 53 ◽  
pp. 464-465
Author(s):  
N. David Theodore ◽  
Andre Vantomme ◽  
Peter Crazier
Keyword(s):  
Thermal Instability ◽  
Lattice Mismatch ◽  
Field Effect Transistors ◽  
Contact Layer ◽  
Interface Roughness ◽  
Oxide Semiconductor ◽  
Surface Layers ◽  
Silicide Layer ◽  
Small Lattice ◽  
Buried Layers

Contact is typically made to source/drain regions of metal-oxide-semiconductor field-effect transistors (MOSFETs) by use of TiSi2 or CoSi2 layers followed by AI(Cu) metal lines. A silicide layer is used to reduce contact resistance. TiSi2 or CoSi2 are chosen for the contact layer because these silicides have low resistivities (~12-15 μΩ-cm for TiSi2 in the C54 phase, and ~10-15 μΩ-cm for CoSi2). CoSi2 has other desirable properties, such as being thermally stable up to >1000°C for surface layers and >1100°C for buried layers, and having a small lattice mismatch with silicon, -1.2% at room temperature. During CoSi2 growth, Co is the diffusing species. Electrode shorts and voids which can arise if Si is the diffusing species are therefore avoided. However, problems can arise due to silicide-Si interface roughness (leading to nonuniformity in film resistance) and thermal instability of the resistance upon further high temperature annealing. These problems can be avoided if the CoSi2 can be grown epitaxially on silicon.

Fabrication and characterization - by High Resolution Electron Microscopy and atom probe microanalysis - of Co-based metallic multilayer films

1990 ◽  
Vol 48 (4) ◽  
pp. 772-773
Author(s):  
Amanda K. Petford-Long ◽  
A. Cerezo ◽  
M.G. Hetherington
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Atom Probe ◽  
Multilayer Films ◽  
Interface Roughness ◽  
Probe Field ◽  
Resolution Electron ◽  
Potential Applications ◽  
Field Ion Microscope

The fabrication of multilayer films (MLF) with layer thicknesses down to one monolayer has led to the development of materials with unique properties not found in bulk materials. The properties of interest depend critically on the structure and composition of the films, with the interfacial regions between the layers being of particular importance. There are a number of magnetic MLF systems based on Co, several of which have potential applications as perpendicular magnetic (e.g Co/Cr) or magneto-optic (e.g. Co/Pt) recording media. Of particular concern are the effects of parameters such as crystallographic texture and interface roughness, which are determined by the fabrication conditions, on magnetic properties and structure.In this study we have fabricated Co-based MLF by UHV thermal evaporation in the prechamber of an atom probe field-ion microscope (AP). The multilayers were deposited simultaneously onto cobalt field-ion specimens (for AP and position-sensitive atom probe (POSAP) microanalysis without exposure to atmosphere) and onto the flat (001) surface of oxidised silicon wafers (for subsequent study in cross-section using high-resolution electron microscopy (HREM) in a JEOL 4000EX. Deposi-tion was from W filaments loaded with material in the form of wire (Co, Fe, Ni, Pt and Au) or flakes (Cr). The base pressure in the chamber was around 8×10−8 torr during deposition with a typical deposition rate of 0.05 - 0.2nm/s.

AMICA: the Antarctic Mid-Infrared CAmera for the IRAIT telescope

2005 ◽  
Vol 14 ◽  
pp. 337-342 ◽  
Author(s):  
M. Dolci ◽  
G. Valentini ◽  
O. Straniero ◽  
G. Di Rico ◽  
M. Ragni ◽  
...  
Keyword(s):  
Infrared Camera ◽  
Mid Infrared ◽  
The Antarctic

The Effect of Roughness Features on Mos Surface Electric Field and Fowler-Nordheim Tunneling Behavior

1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  
Keyword(s):  
Electric Field ◽  
Three Dimensional ◽  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Interface Roughness ◽  
Normal Electric Field ◽  
Surface Electric Field ◽  
Tunneling Behavior ◽  
Nordheim Tunneling

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.

Experimental investigation and modelling of light scattering in a-Si:H solar cells deposited on glass/ZnO:Al substrates

2002 ◽  
Vol 715 ◽  
Author(s):  
J. Krc ◽  
M. Zeman ◽  
O. Kluth ◽  
F. Smole ◽  
M. Topic
Keyword(s):  
Surface Roughness ◽  
Experimental Investigation ◽  
Solar Cells ◽  
Angular Distribution ◽  
Light Scattering ◽  
Optical Model ◽  
Distribution Functions ◽  
Interface Roughness ◽  
Scattering Parameters ◽  
Good Agreement

AbstractThe descriptive scattering parameters, haze and angular distribution functions of textured ZnO:Al transparent conductive oxides with different surface roughness are measured. An approach to determine the scattering parameters of all internal interfaces in p-i-n a-Si:H solar cells deposited on the glass/ZnO:Al substrates is presented. Using the determined scattering parameters as the input parameters of the optical model, a good agreement between the measured and simulated quantum efficiencies of the p-i-n a-Si:H solar cells with different interface roughness is achieved.

MID-INFRARED BROADBAND ABSORPTION BASED ON HBN/METAL HETEROSTRUCTURES

2018 ◽  
Author(s):  
Y. H. Kan ◽  
Changying Zhao ◽  
Zhuomin M. Zhang
Keyword(s):  
Mid Infrared ◽  
Broadband Absorption
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