Investigation of electron–phonon interaction in bulk and nanoflakes of MoS2 using anomalous “b” mode in the resonant Raman spectra

2020 ◽  
Vol 128 (16) ◽  
pp. 165703
Author(s):  
Rekha Rao ◽  
Ram Ashish Yadav ◽  
N. Padma ◽  
Jagannath ◽  
A. Arvind
Keyword(s):  
Raman Spectra ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Resonant Raman

Raman spectra of twisted bilayer graphene close to the magic angle

2D Materials ◽  
2022 ◽  
Author(s):  
Tiago Campolina Barbosa ◽  
Andreij C. Gadelha ◽  
Douglas A. A. Ohlberg ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Raman Spectra ◽  
Laser Excitation ◽  
Bilayer Graphene ◽  
Geometrical Model ◽  
Excitation Wavelength ◽  
Magic Angle ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Excitation Laser ◽  
Twisted Bilayer Graphene

Abstract In this work, we study the Raman spectra of twisted bilayer graphene samples as a function of their twist-angles (θ), ranging from 0.03º to 3.40º, where local θ are determined by analysis of their associated moiré superlattices, as imaged by scanning microwave impedance microscopy. Three standard excitation laser lines are used (457, 532, and 633 nm wavelengths), and the main Raman active graphene bands (G and 2D) are considered. Our results reveal that electron-phonon interaction influences the G band's linewidth close to the magic angle regardless of laser excitation wavelength. Also, the 2D band lineshape in the θ < 1º regime is dictated by crystal lattice and depends on both the Bernal (AB and BA) stacking bilayer graphene and strain soliton regions (SP) [1]. We propose a geometrical model to explain the 2D lineshape variations, and from it, we estimate the SP width when moving towards the magic angle.

RESONANT RAMAN SCATTERING AND EXCITON-PHONON INTERACTION IN CdTe / (Cd,Mn)Te QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-345-C5-348
Author(s):  
S.-K. CHANG ◽  
H. NAKATA ◽  
A. V. NURMIKKO ◽  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Phonon Interaction ◽  
Resonant Raman ◽  
Resonant Raman Scattering

The simulation of the electron-phonon interaction in silicon

2018 ◽  
Vol 30 (12) ◽  
pp. 3-16
Author(s):  
A. Berezin ◽  
◽  
Yu. Volkov ◽  
M. Markov ◽  
I. Tarakanov ◽  
...  
Keyword(s):  
Phonon Interaction ◽  
Electron Phonon Interaction
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