scholarly journals Metal-ion-controlled growth and nanoindentation response of 3D, bicontinuous Cu–Fe thin films

2020 ◽  
Vol 128 (3) ◽  
pp. 035303
Author(s):  
Benjamin K. Derby ◽  
Arya Chatterjee ◽  
Amit Misra
Author(s):  
Sucheta Sengupta ◽  
Rinki Aggarwal ◽  
Yuval Golan

This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.


2017 ◽  
Vol 63 ◽  
pp. 203-211 ◽  
Author(s):  
Md. Anower Hossain ◽  
Rashad Al-Gaashani ◽  
Hicham Hamoudi ◽  
Mohammed J. Al Marri ◽  
Ibnelwaleed A. Hussein ◽  
...  

2008 ◽  
Vol 9 (1) ◽  
pp. 289-295 ◽  
Author(s):  
Matthew D. Cathell ◽  
Janah C. Szewczyk ◽  
Frances A. Bui ◽  
Carrie A. Weber ◽  
Jessica D. Wolever ◽  
...  

2013 ◽  
Vol 764 ◽  
pp. 266-283 ◽  
Author(s):  
Ibram Ganesh ◽  
Rekha Dom ◽  
P.H. Borse ◽  
Ibram Annapoorna ◽  
G. Padmanabham ◽  
...  

Different amounts of Fe, Co, Ni and Cu-doped TiO2 thin films were prepared on fluorine doped tin oxide (FTO) coated soda-lime glass substrates by following a conventional sol-gel dip-coating technique followed by heat treatment at 550 and 600°C for 30 min. These thin films were characterized for photo-current, chronoamperometry and band-gap energy values. The chemical compositions of metals-doped TiO2 thin films on FTO glass substrates were confirmed by XPS spectroscopic study. The metal-ions doped TiO2 thin films had a thickness of <200 nm="" optical="" transparency="" of="">80%, band-gap energy of >3.6 eV, and a direct band-to-band energy transition. The photoelectrochemical (PEC) studies revealed that all the metal-ions doped TiO2 thin films exhibit n-type semi-conducting behavior with a quite stable chronoamperometry and photo-currents that increase with the increase of applied voltage but decrease with the dopant metal-ion concentration in the thin film. Furthermore, these thin films exhibited flat-band potentials amenable to water oxidation reaction in a PEC cell. The 0.5 wt.% Cu-doped TiO2 thin film electrode exhibited an highest incident photon-to-current conversion efficiency (IPCE) of about 21%.


1989 ◽  
Vol 36 (1-4) ◽  
pp. 59-69 ◽  
Author(s):  
D.H. Lowndes ◽  
D.B. Geohegan ◽  
D. Eres ◽  
S.J. Pennycook ◽  
D.N. Mashburn ◽  
...  

2021 ◽  
Vol 14 (02) ◽  
pp. 2151012
Author(s):  
Natangue Heita Shafudah ◽  
Hiroki Nagai ◽  
Mitsunobu Sato

Cubic or tetragonal zirconia thin films of transparent and 100 nm thickness were selectively formed on a quartz glass substrate by heat-treating the molecular precursor films involving Zr(IV) complexes of nitrilotriacetic acid, at 500[Formula: see text]C in air for 1 h. A precursor solution was prepared by a reaction of the ligand and zirconium tetrabutoxide in alcohol under the presence of butylamine. By the addition of H2O2 or H2O into the solution, the spin-coated precursor films were converted to cubic zirconia thin films by the abovementioned procedure. Further, the identical phase was produced also in the case of the electro-sprayed precursor film which was formed by an addition of H2O2 into the solution. On the other hand, the tetragonal zirconia thin film was obtained from a precursor film formed by using a solution dissolving the original Zr(IV) complex of the ligand, without H2O2 nor H2O. The crystal structure of all thin films was determined by using both the X-ray diffraction (XRD) patterns and Raman spectra. Thus, the zirconia thin films of both crystals could be facilely and selectively obtained with no use of hetero-metal ion stabilizers. The XPS spectra of the thin films show that the O/Zr ratio of the cubic phase is 1.37 and slightly larger than tetragonal one (1.29), and also demonstrate that the nitrogen atoms, which may contribute to stabilize these metastable phases at room temperature, of about 5−7 atomic% was remained in the resultant thin films. The adhesion strengths of cubic zirconia thin film onto the quartz glass substrate was 68 MPa and larger than that of tetragonal one, when the precursor films were formed via a spin coating process. The optical and surface properties of the thin films were also examined in relation to the crystal systems.


RSC Advances ◽  
2015 ◽  
Vol 5 (89) ◽  
pp. 72592-72600 ◽  
Author(s):  
Abdul Majid

Experimental and computational analysis of transition metal ion-doped AlInN/GaN thin films.


Langmuir ◽  
2018 ◽  
Vol 34 (5) ◽  
pp. 1932-1940 ◽  
Author(s):  
Jérémy Cure ◽  
Hala Assi ◽  
Kévin Cocq ◽  
Lorena Marìn ◽  
Katia Fajerwerg ◽  
...  

2014 ◽  
Vol 35 (9) ◽  
pp. 1040-1045
Author(s):  
郑剑 ZHENG Jian ◽  
张振中 ZHANG Zhen-zhong ◽  
王立昆 WANG Li-kun ◽  
韩舜 HAN Shun ◽  
张吉英 ZHANG Ji-ying ◽  
...  

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