scholarly journals Light absorption in semiconducting quantum dot clusters with fixed surface areas in an external tilted magnetic field

AIP Advances ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 085306
Author(s):  
M. Solaimani ◽  
Davood Haji Taghi Tehrani
2017 ◽  
Vol 96 (12) ◽  
Author(s):  
C. A. Jiménez-Orjuela ◽  
H. Vinck-Posada ◽  
José M. Villas-Bôas

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Hojjatollah K. Salehani ◽  
Maedeh Zakeri

The light absorption of a ZnS quantum dot with a parabolic confinement potential is studied in this paper in the presence of magnetic field perpendicular to dot plane. The Schrodinger equation of a single electron is solved numerically, and energy spectra and wave functions are obtained. Then, the optical absorption coefficients in transition from ground state to different excited states are calculated. The effects the magnetic field and quantum dot width on the optical absorption are investigated. It is found that the optical absorption coefficient has a blue shift by increasing of magnetic field or confinement strength of quantum dot.


2021 ◽  
Vol 104 (7) ◽  
Author(s):  
Miriam Neumann ◽  
Florian Kappe ◽  
Thomas K. Bracht ◽  
Michael Cosacchi ◽  
Tim Seidelmann ◽  
...  

2014 ◽  
Vol 6 (2) ◽  
pp. 1178-1190
Author(s):  
A. JOHN PETER ◽  
Ada Vinolin

Simultaneous effects of magnetic field, pressure and temperature on the exciton binding energies are found in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot. Numerical calculations are carried out taking into consideration of spatial confinement effect. The cylindrical system is taken in the present problem with the strain effects. The electronic properties and the optical properties are found with the combined effects of magnetic field strength, hydrostatic pressure and temperature values. The exciton binding energies and the nonlinear optical properties are carried out taking into consideration of geometrical confinement and the external perturbations.Compact density approach is employed to obtain the nonlinear optical properties. The optical rectification coefficient is obtained with the photon energy in the presence of pressure, temperature and external magnetic field strength. Pressure and temperature dependence on nonlinear optical susceptibilities of generation of second and third order harmonics as a function of incident photon energy are brought out in the influence of magnetic field strength. The result shows that the electronic and nonlinear optical properties are significantly modified by the applications of external perturbations in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot.


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