scholarly journals Intrinsic thermal interfacial resistance measurement in bonded metal–polymer foils

2020 ◽  
Vol 91 (10) ◽  
pp. 104901
Author(s):  
Manjunath C. Rajagopal ◽  
Timothy Man ◽  
Adreet Agrawal ◽  
Gowtham Kuntumalla ◽  
Sanjiv Sinha
1983 ◽  
Vol 44 (C6) ◽  
pp. C6-463-C6-467 ◽  
Author(s):  
B. Merté ◽  
P. Korpiun ◽  
E. Lüscher ◽  
R. Tilgner

1988 ◽  
Vol 49 (C5) ◽  
pp. C5-49-C5-59 ◽  
Author(s):  
P. S. HO ◽  
R. HAIGHT ◽  
R. C. WHITE ◽  
B. D. SILVERMAN

1986 ◽  
Vol 14 (1) ◽  
pp. 44-72 ◽  
Author(s):  
C. M. Mc C. Ettles

Abstract It is proposed that tire-pavement friction is controlled by thermal rather than by hysteresis and viscoelastic effects. A numerical model of heating effects in sliding is described in which the friction coefficient emerges as a dependent variable. The overall results of the model can be expressed in a closed form using Blok's flash temperature theory. This allows the factors controlling rubber friction to be recognized directly. The model can be applied in quantitative form to metal-polymer-ice contacts. Several examples of correlation are given. The difficulties of characterizing the contact conditions in tire-pavement friction reduce the model to qualitative form. Each of the governing parameters is examined in detail. The attainment of higher friction by small, discrete particles of aluminum filler is discussed.


2018 ◽  
Author(s):  
Rituja Patil ◽  
Aayush Mantri ◽  
Stephen House ◽  
Judith C. Yang ◽  
James McKone

We have studied the composition and morphology of Ni-Mo alloys. These alloys consist of a Ni-rich core surrounded by Mo-rich oxide layer. The HER activity of Ni-Mo alloys was seen to be limited by interfacial resistance rather than kinetic and solution transport. Vulcan carbon, a conductive support mitigate the resistive limitations by providing conductive percolation networks.


Author(s):  
Clifford Howard ◽  
Sam Subramanian ◽  
Kent Erington ◽  
Randall Mulder ◽  
Yuk Tsang ◽  
...  

Abstract Advanced technologies with higher gate leakage due to oxide tunneling current enable detection of high resistance faults to gate nodes using a straight forward resistance measurement.


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