scholarly journals Field-free switching of magnetic tunnel junctions driven by spin–orbit torques at sub-ns timescales

2020 ◽  
Vol 116 (23) ◽  
pp. 232406 ◽  
Author(s):  
Viola Krizakova ◽  
Kevin Garello ◽  
Eva Grimaldi ◽  
Gouri Sankar Kar ◽  
Pietro Gambardella
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Orbit

scholarly journals A thermodynamic core using voltage-controlled spin-orbit-torque magnetic tunnel junctions

2021 ◽  
Author(s):  
Albert Lee ◽  
Bingqian Dai ◽  
Di Wu ◽  
Hao Wu ◽  
Robert N Schwartz ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Orbit

scholarly journals Single-shot dynamics of spin–orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions

2020 ◽  
Vol 15 (2) ◽  
pp. 111-117 ◽  
Author(s):  
Eva Grimaldi ◽  
Viola Krizakova ◽  
Giacomo Sala ◽  
Farrukh Yasin ◽  
Sébastien Couet ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Single Shot ◽  
Spin Orbit

scholarly journals Spin-Orbit-Torque Switching in 20-nm Perpendicular Magnetic Tunnel Junctions

2018 ◽  
Vol 10 (2) ◽  
Author(s):  
Mukund Bapna ◽  
Brad Parks ◽  
Samuel D. Oberdick ◽  
Hamid Almasi ◽  
Weigang Wang ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Orbit ◽  
20 Nm

Compact Model for Spin–Orbit Magnetic Tunnel Junctions

2016 ◽  
Vol 63 (2) ◽  
pp. 848-855 ◽  
Author(s):  
Mohammad Kazemi ◽  
Graham E. Rowlands ◽  
Engin Ipek ◽  
Robert A. Buhrman ◽  
Eby G. Friedman
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Compact Model ◽  
Spin Orbit

Magnetic Nonvolatile SRAM Based on Voltage-Gated Spin-Orbit-Torque Magnetic Tunnel Junctions

2020 ◽  
Vol 67 (5) ◽  
pp. 1965-1971 ◽  
Author(s):  
Chengzhi Wang ◽  
Deming Zhang ◽  
Kaili Zhang ◽  
Lang Zeng ◽  
You Wang ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Orbit ◽  
Voltage Gated

scholarly journals Spin–orbit torque driven magnetization switching in W/CoFeB/MgO-based type-Y three terminal magnetic tunnel junctions

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shinji Isogami ◽  
Yohei Shiokawa ◽  
Atsushi Tsumita ◽  
Eiji Komura ◽  
Yugo Ishitani ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Bias Field ◽  
Film Plane ◽  
Spin Orbit ◽  
Magnetization Switching ◽  
Effective Spin ◽  
Current Dependence ◽  
Magnetic Easy Axis ◽  
Long Pulse

AbstractWe have studied current induced magnetization switching in W/CoFeB/MgO based three terminal magnetic tunnel junctions. The switching driven by spin—orbit torque (SOT) is evaluated in the so-called type-Y structure, in which the magnetic easy-axis of the CoFeB layer lies in the film plane and is orthogonal to the current flow. The effective spin Hall angle estimated from the bias field dependence of critical current (Ic) is ~ 0.07. The field and current dependence of the switching probability are studied. The field and DC current induced switching can be described using a model based on thermally assisted magnetization switching. In contrast, the 50 ns long pulse current dependence of the switching probability shows significant deviation from the model, even if contribution from the field-like torque is included. The deviation is particularly evident when the threshold switching current is larger. These results show that conventional thermally assisted magnetization switching model cannot be used to describe SOT induced switching using short current pulses.

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