Parameter extraction of photovoltaic single-diode model using integrated current–voltage error criterion

2020 ◽  
Vol 12 (4) ◽  
pp. 043704
Author(s):  
Jialei Su ◽  
Yunpeng Zhang ◽  
Chen Zhang ◽  
Tingkun Gu ◽  
Ming Yang
Keyword(s):  
Parameter Extraction ◽  
Error Criterion ◽  
Current Voltage

scholarly journals Junction Parameter Extraction for Electronic Device Characterization

2004 ◽  
Vol 27 (2) ◽  
pp. 61-67
Author(s):  
S. Dib ◽  
C. Salame ◽  
N. Toufik ◽  
A. Khoury ◽  
F. Pélanchon ◽  
...  
Keyword(s):  
Electronic Device ◽  
Control Process ◽  
Parameter Extraction ◽  
Exponential Model ◽  
Voltage Characteristic ◽  
Model Parameters ◽  
Current Voltage Characteristic ◽  
Device Characterization ◽  
Current Voltage

A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determination of the singleexponential model parameters. The method is easy to implement in a control process for device characterization. An application, achieved to observe the degradation of the emitter–base junction of a bipolar transistor during an aging experiment, shows that the evolutions of the single exponential model parameters versus time introduce a means for degradation quantification.

scholarly journals Unified model for p-n junction current-voltage characteristics

2011 ◽  
Vol 1 (1) ◽  
Author(s):  
Miron Cristea
Keyword(s):  
Carrier Lifetime ◽  
Parameter Extraction ◽  
Injection Level ◽  
High Injection Level ◽  
High Injection ◽  
Current Voltage ◽  
Basic Parameters ◽  
Current Voltage Characteristics ◽  
High Level ◽  
Charge Carrier Lifetime

AbstractCurrent-voltage p-n junction characteristics have been analyzed mainly at low injection levels. The high injection level region of the I/V characteristic allows the possibility of determining basic parameters of the semiconductor material, like the bulk doping concentration and charge carrier lifetime. Based on a new theoretical model of the p-n junction characteristics, valid for both low level and high level regions, a new general equation of the p-n junction is presented. It can serve for parameter extraction of semiconductor devices.

UNIFIED GaAs MESFET MODEL FOR CIRCUIT SIMULATIONS

1992 ◽  
Vol 03 (02) ◽  
pp. 201-233 ◽  
Author(s):  
M.S. SHUR ◽  
T.A. FJELDLY ◽  
T. YTTERDAL ◽  
K. LEE
Keyword(s):  
Field Effect Transistors ◽  
Parameter Extraction ◽  
Model Parameters ◽  
New Device ◽  
Velocity Saturation ◽  
Circuit Simulator ◽  
Gaas Mesfet ◽  
Current Voltage ◽  
Physically Based ◽  
Drain Bias

We describe a new, unified model for MEtal Semiconductor Field Effect Transistors (MESFETs) which covers all ranges of operation, including the subthreshold regime. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics are described by continuous, analytical expressions with relatively few, physically based parameters. The model includes effects such as velocity saturation, parasitic series resistances, the dependence of the threshold voltage on drain bias, finite output conductance in saturation, and temperature dependence of the device parameters. We also describe a parameter extraction routine which allows the model parameters to be derived in a straightforward fashion from experimental data. The model has been incorporated into our new circuit simulator AIM-Spice. The new device characterization is applied with good results to a typical ion-implanted GaAs MESFET and a delta-doped MESFET.

Automation Software for Semiconductor Research Laboratories: Electrical Parameter Calculation Program (SeCLaS-PC)

2020 ◽  
Vol 29 (13) ◽  
pp. 2050215
Author(s):  
A. Akkaya ◽  
E. Ayyıldız
Keyword(s):  
Electrical Parameter ◽  
Parameter Extraction ◽  
Electrical Measurements ◽  
Temperature Dependent ◽  
Parameter Calculation ◽  
Simple Program ◽  
Current Voltage ◽  
Measurement Results ◽  
Engineering Environment ◽  
User Friendly

We prepared a simple program for basic electrical measurements and parameter extraction from these measurements of metal–semiconductor (MS) contacts. In this paper, we introduce a basic electrical parameter calculation software (SeCLaS-PC) for semiconductor laboratories from the temperature-dependent/independent current–voltage ([Formula: see text]–[Formula: see text]), capacitance– voltage ([Formula: see text]–[Formula: see text]) and capacitance–frequency ([Formula: see text]–[Formula: see text]) measurement results. SeCLaS-PC program was developed using Keysight VEE Pro (Visual Engineering Environment) software and the program has a user-friendly graphical interface. More than 50 device parameters can be easily obtained, using different methods, from the [Formula: see text]–[Formula: see text], temperature-dependent [Formula: see text]–[Formula: see text] and temperature-dependent [Formula: see text]–[Formula: see text] measurement results for one device, with our SeCLaS-PC program.

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