scholarly journals Formation of laterally ordered quantum dot molecules by in situ nanosecond laser interference

2020 ◽  
Vol 116 (20) ◽  
pp. 201901 ◽  
Author(s):  
Yun-Ran Wang ◽  
Im Sik Han ◽  
Chao-Yuan Jin ◽  
Mark Hopkinson
2021 ◽  
Vol 124 ◽  
pp. 105614
Author(s):  
S. Tilouche ◽  
A. Sayari ◽  
M. Omri ◽  
S. Souilem ◽  
L. Sfaxi ◽  
...  

2004 ◽  
Vol 85 (2) ◽  
pp. 284-286 ◽  
Author(s):  
V. G. Talalaev ◽  
J. W. Tomm ◽  
N. D. Zakharov ◽  
P. Werner ◽  
B. V. Novikov ◽  
...  

2013 ◽  
Vol 88 (4) ◽  
Author(s):  
Dibyendu Roy ◽  
Yan Li ◽  
Alex Greilich ◽  
Yuriy V. Pershin ◽  
Avadh Saxena ◽  
...  

2001 ◽  
Author(s):  
Seung-Jae Moon ◽  
Minghong Lee ◽  
Costas P. Grigoropoulos

Abstract The liquid-solid interface motion and the temperature history of thin Si films during excimer laser annealing are observed by in situ experiments combining time-resolved (∼lns) thermal emission measurements, optical reflectance and transmittance at near-IR wavelengths and electrical conductance measurements. The spontaneous nucleation temperature in the supercooled liquid melt is studied from the thermal emission measurement A new double laser recrystallization technique using a temporally modulated CW Ar+ laser in conjunction with a superposed nanosecond laser pulse produces lateral grain growth at the irradiated spot. The laser melting process is numerically simulated. High-resolution laser flash photography enabled in-situ direct visualization of the resolidification process. The images reveal lateral solidification velocity of about 10 m/s.


2007 ◽  
Vol 129 (34) ◽  
pp. 10613-10613 ◽  
Author(s):  
Rolf Koole ◽  
Peter Liljeroth ◽  
Celso de Mello Donegá ◽  
Daniël Vanmaekelbergh ◽  
Andries Meijerink

2015 ◽  
Vol 69 ◽  
pp. 349-353 ◽  
Author(s):  
Si-Cong Tian ◽  
Ren-Gang Wan ◽  
En-Bo Xing ◽  
Jia-Min Rong ◽  
Hao Wu ◽  
...  

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