Development of x-ray reflectivity measurement system under N2 to prevent surface contamination

2020 ◽  
Vol 91 (7) ◽  
pp. 075112
Author(s):  
Yasushi Azuma ◽  
Akira Kurokawa
Keyword(s):  
Measurement System ◽  
Surface Contamination ◽  
Reflectivity Measurement ◽  
X Ray

Rapid X-ray reflectivity measurement using a new liquid interface reflectometer at SPring-8

2009 ◽  
Vol 167 (1) ◽  
pp. 101-105 ◽  
Author(s):  
Y. F. Yano ◽  
T. Uruga ◽  
H. Tanida ◽  
H. Toyokawa ◽  
Y. Terada ◽  
...  
Keyword(s):  
Liquid Interface ◽  
Reflectivity Measurement ◽  
X Ray

scholarly journals Stitching interferometric measurement system for hard x-ray nanofocusing mirrors

2009 ◽  
Vol 186 ◽  
pp. 012080
Author(s):  
Hirokatsu Yumoto ◽  
Hidekazu Mimura ◽  
Soichiro Handa ◽  
Takashi Kimura ◽  
Satoshi Matsuyama ◽  
...  
Keyword(s):  
Measurement System ◽  
X Ray ◽  
Interferometric Measurement

Total Reflection X-Ray Fluorescence Spectroscopy: Analysis Of Gaas And InGaAs

1993 ◽  
Vol 37 ◽  
pp. 585-593
Author(s):  
Leigh Ann Filcs-Sesler ◽  
Don Plumton ◽  
Yung-Chung Kao ◽  
Tae S. Kim
Keyword(s):  
Nondestructive Method ◽  
Device Fabrication ◽  
Total Reflection ◽  
Surface Contamination ◽  
Device Performance ◽  
Spectroscopy Analysis ◽  
X Ray ◽  
Low Levels ◽  
Metallic Impurities

AbstractThis article explores applications of total reflection x-ray fluorescence (TRXRF) to GaAs processes. The applications include determination of surface contamination and InGaAs layer thicknesses. Surface contamination can deteriorate device performance and can occur in starting substrates and in subsequent processing. We demonstrate that TRXRF is a quick, nondestructive method for identifying sulfur contamination on incoming wafers and low levels of metallic impurities from device fabrication. Variable angle TRXRF has been used to determine heterostmeture film thickness, measuring films of InGaAs on GaAs as thin as 4 nm.

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