scholarly journals Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts

2020 ◽  
Vol 116 (25) ◽  
pp. 252108
Author(s):  
Neil R. Taylor ◽  
Yongchao Yu ◽  
Mihee Ji ◽  
Tolga Aytug ◽  
Shannon Mahurin ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Electrical Contacts ◽  
Radiation Response ◽  
Direct Write

Direct-Write Polymer Diodes

2002 ◽  
Vol 734 ◽  
Author(s):  
Mikhail I. Sluch ◽  
Robert L. Parkhill ◽  
Robert M. Taylor ◽  
Kenneth H. Church
Keyword(s):  
Glass Substrate ◽  
Conjugated Polymer ◽  
Sulfonic Acid ◽  
Schottky Diodes ◽  
Direct Write ◽  
Rectifier Circuit ◽  
Full Wave ◽  
Bridge Rectifier ◽  
Type Semiconductor ◽  
Polystyrene Sulfonic Acid

ABSTRACTConjugated polymer Schottky diodes have been directly written onto glass and alumina substrates. The rectifying contact was made between the p-type semiconductor poly(3,4-ethylene-dioxythiophene) doped with polystyrene sulfonic acid and Zn. The devices exhibit rectification ratios in the range of 102:1 to 103:1 at biases of ±1 V and ±10 V, respectively. The devices demonstrate rectification at frequencies up to 250 kHz. A full-wave bridge rectifier circuit written onto a glass substrate converts ac to dc up to 250 kHz and ±5 V.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

Schottky diodes based on 2D materials for environmental gas monitoring: a review on emerging trends, recent developments and future perspectives

2021 ◽  
Author(s):  
Minu Mathew ◽  
Chandra Sekhar Rout
Keyword(s):  
Gas Sensing ◽  
2D Materials ◽  
Schottky Diodes ◽  
High Sensitivity ◽  
Future Perspectives ◽  
Working Temperature ◽  
Emerging Trends ◽  
Gas Sensing Properties ◽  
Recent Developments ◽  
Sensitivity And Selectivity

This review details the fundamentals, working principles and recent developments of Schottky junctions based on 2D materials to emphasize their improved gas sensing properties including low working temperature, high sensitivity, and selectivity.

ELECTRON BEAM DIRECT WRITE EFFECTS ON CMOS DEVICES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-291-C4-294
Author(s):  
K. BARLOW
Keyword(s):  
Electron Beam ◽  
Direct Write
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