Photoresponse above 85 K of selective epitaxy grown high-Tc superconducting microwires

2020 ◽  
Vol 117 (3) ◽  
pp. 032602
Author(s):  
X. Xing ◽  
K. Balasubramanian ◽  
S. Bouscher ◽  
O. Zohar ◽  
Y. Nitzav ◽  
...  
Keyword(s):  
Selective Epitaxy ◽  
High Tc

High resolution STEM imaging study on high Tc superconductor YBa2CuaO7-x

1988 ◽  
Vol 46 ◽  
pp. 882-883
Author(s):  
H.-J. Ou ◽  
J. M. Cowley
Keyword(s):  
Crystal Structure ◽  
High Resolution ◽  
Grain Boundary ◽  
Strong Field ◽  
Imaging Study ◽  
Structure Defects ◽  
High Tc ◽  
High Tc Superconductor ◽  
Diffraction Patterns ◽  
Lattice Planes

Using the dedicate VG-HB5 STEM microscope, the crystal structure of high Tc superconductor of YBa2Cu3O7-x has been studied via high resolution STEM (HRSTEM) imaging and nanobeam (∽3A) diffraction patterns. Figure 1(a) and 2(a) illustrate the HRSTEM image taken at 10' times magnification along [001] direction and [100] direction, respectively. In figure 1(a), a grain boundary with strong field contrast is seen between two crystal regions A and B. The grain boundary appears to be parallel to a (110) plane, although it is not possible to determine [100] and [001] axes as it is in other regions which contain twin planes [3]. Following the horizontal lattice lines, from left to right across the grain boundary, a lattice bending of ∽4° is noticed. Three extra lattice planes, indicated by arrows, were found to terminate at the grain boundary and form dislocations. It is believed that due to different chemical composition, such structure defects occur during crystal growth. No bending is observed along the vertical lattice lines.

The many faces of STEM in materials science

1991 ◽  
Vol 49 ◽  
pp. 440-441
Author(s):  
John Silcox
Keyword(s):  
Materials Science ◽  
Auger Spectroscopy ◽  
Dark Field ◽  
High Tc Superconductors ◽  
High Tc ◽  
Acoustic Environment ◽  
Electromagnetic Vibration ◽  
The Many ◽  
Serial Mode

Determination of the microstructure and microchemistry of small features often provides the insight needed for the understanding of processes in real materials. In many cases, it is not adequate to use microscopy alone. Microdiffraction and microspectroscopic information such as EELS, X-ray microprobe analysis and Auger spectroscopy can all contribute vital parts of the picture. For a number of reasons, dedicated STEM offers considerable promise as a quantitative instrument. In this paper, we review progress towards effective quantitative use of STEM with illustrations drawn from studies of high Tc superconductors, compound semiconductors and metallization of H-terminated silicon.Intrinsically, STEM is a quantitative instrument. Images are acquired directly by detectors in serial mode which is particularly convenient for digital image acquisition, control and display. The VG HB501A at Cornell has been installed in a particularly stable electromagnetic, vibration and acoustic environment. Care has been paid to achieving UHV conditions (i.e., 10-10 Torr). Finally, it has been interfaced with a VAX 3200 work station by Kirkland. This permits, for example, the acquisition of bright field (or energy loss) images and dark field images simultaneously as quantitative arrays in perfect registration.

High Resolution Electron Microscopy of internal interfaces in layered materials

1990 ◽  
Vol 48 (4) ◽  
pp. 320-321
Author(s):  
Yoichi Ishida ◽  
Hideki Ichinose ◽  
Yutaka Takahashi ◽  
Jin-yeh Wang
Keyword(s):  
Grain Boundaries ◽  
Mirror Symmetry ◽  
Functional Materials ◽  
High Resolution Electron Microscopy ◽  
Layered Materials ◽  
Plane Boundary ◽  
Chemical Information ◽  
Layer Plane ◽  
High Tc ◽  
Cubic Metals

Layered materials draw attention in recent years in response to the world-wide drive to discover new functional materials. High-Tc superconducting oxide is one example. Internal interfaces in such layered materials differ significantly from those of cubic metals. They are often parallel to the layer of the neighboring crystals in sintered samples(layer plane boundary), while periodically ordered interfaces with the two neighboring crystals in mirror symmetry to each other are relatively rare. Consequently, the atomistic features of the interface differ significantly from those of cubic metals. In this paper grain boundaries in sintered high-Tc superconducting oxides, joined interfaces between engineering ceramics with metals, and polytype interfaces in vapor-deposited bicrystal are examined to collect atomic information of the interfaces in layered materials. The analysis proved that they are not neccessarily more complicated than that of simple grain boundaries in cubic metals. The interfaces are majorly layer plane type which is parallel to the compound layer. Secondly, chemical information is often available, which helps the interpretation of the interface atomic structure.

Intergrowth of modulated structures in high Tc Bi-Sr-Ca-Cu-O superconductors

1990 ◽  
Vol 48 (4) ◽  
pp. 76-77
Author(s):  
A.Q. He ◽  
G.W. Qiao ◽  
J. Zhu ◽  
H.Q. Ye
Keyword(s):  
Twin Structure ◽  
Modulated Structure ◽  
High Tc ◽  
One Dimensional ◽  
Lattice Constants ◽  
Superconducting Phases ◽  
Modulated Structures ◽  
Layer Structures

Since the first discovery of high Tc Bi-Sr-Ca-Cu-O superconductor by Maeda et al, many EM works have been done on it. The results show that the superconducting phases have a type of ordered layer structures similar to that in Y-Ba-Cu-O system formulated in Bi2Sr2Can−1CunO2n+4 (n=1,2,3) (simply called 22(n-1) phase) with lattice constants of a=0.358, b=0.382nm but the length of c being different according to the different value of n in the formulate. Unlike the twin structure observed in the Y-Ba-Cu-O system, there is an incommensurate modulated structure in the superconducting phases of Bi system superconductors. Modulated wavelengths of both 1.3 and 2.7 nm have been observed in the 2212 phase. This communication mainly presents the intergrowth of these two kinds of one-dimensional modulated structures in 2212 phase.

Modulated structures in (Bi,Pb)-Sr-Ca-Cu-O films

1990 ◽  
Vol 48 (4) ◽  
pp. 62-63
Author(s):  
Shozo Ikeda ◽  
Hirotoshi Hayakawa ◽  
Daniel R. Dietderich
Keyword(s):  
Rf Magnetron Sputtering ◽  
Potential Method ◽  
High Tc ◽  
Bscco System ◽  
Heat Treated ◽  
Modulated Structures ◽  
High Tc Phase ◽  
Deposited Films ◽  
Sputtering System

Pb addition makes easier to form the high Tc phase in the BSCCO system. However, Pb easily vaporized at high temperature. A controlled Pb potential method has been applied to grow the high Tc phase in films. Initially, films are deposited on cleaved MgO substrates using an rf magnetron sputtering system. These amorphous as-deposited films are heat treated in a sealed gold capsule along with a large pellet of Pb-added BSCCO. Details of the process and characterization of the films have been reported elsewhere (1). Films trated for 0.5h at 850° C contain mainly the low Tc phase with a small amount of the high Tc phase. Hawever, films treated for 3h at 850°C consist mainly of the high Tc phase. This film is superconductive with a Tc(zero) of 106K. The Pb/Bi ratio of the films, analysed by SEM- EDS, are 0.12 and 0.18 for heat tratment times of 0.5 and 3h, respectively. The present study investigates the modulated structures of these films using HREM.

Secondary electron imaging of YBa2Cu3O7-x high-Tc superconductors in Scanning Transmission Electron Microscope

1989 ◽  
Vol 47 ◽  
pp. 684-685
Author(s):  
D. R. Liu ◽  
D. B. Williams
Keyword(s):  
Electron Microscope ◽  
Secondary Electron ◽  
Scanning Transmission Electron Microscope ◽  
Superconducting Phase ◽  
Contrast Imaging ◽  
High Tc ◽  
Bright Contrast ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Imaging

The secondary electron imaging technique in a scanning electron microscope (SEM) has been used first by Millman et al. in 1987 to distinguish between the superconducting phase and the non-superconducting phase of the YBa2Cu3O7-x superconductors. They observed that, if the sample was cooled down below the transition temperature Tc and imaged with secondary electrons, some regions in the image would show dark contrast whereas others show bright contrast. In general, the contrast variation of a SEM image is the variation of the secondary electron yield over a specimen, which in turn results from the change of topography and conductivity over the specimen. Nevertheless, Millman et al. were able to demonstrate with their experimental results that the dominant contrast mechanism should be the conductivity variation and that the regions of dark contrast were the superconducting phase whereas the regions of bright contrast were the non-superconducting phase, because the latter was a poor conductor and consequently, the charge building-up resulted in high secondary electron emission. This observation has since aroused much interest amoung the people in electron microscopy and high Tc superconductivity. The present paper is the preliminary report of our attempt to carry out the secondary electron imaging of this material in a scanning transmission electron microscope (STEM) rather than in a SEM. The advantage of performing secondary electron imaging in a TEM is obvious that, in a TEM, the spatial resolution is higher and many more complementary techniques, e.g, diffraction contrast imaging, phase contrast imaging, electron diffraction and various microanalysis techniques, are available.

Electron-Probe Quantitative Energy-Dispersive Analysis of Trace Magnesium Concentrations in Ag-Mg Alloys

1996 ◽  
Vol 54 ◽  
pp. 510-511
Author(s):  
R. B. Marinenko
Keyword(s):  
Electron Probe ◽  
Energy Dispersive Spectrometry ◽  
Mg Alloys ◽  
Energy Dispersive ◽  
Energy Dispersive Analysis ◽  
High Tc ◽  
Alloy Wire ◽  
High Tc Superconductor ◽  
Eds Analysis ◽  
Superior Mechanical Properties

Internally oxidized Ag-Mg alloys are used as sheaths for high Tc superconductor wires because of their superior mechanical properties. The preparation and characteristics of these materials have been reported. Performance of the sheaths depends on the concentration of the magnesium which generally is less than 0.5 wt. percent. The purpose of this work was to determine whether electron probe microanalysis using energy dispersive spectrometry (EDS) could be used to quantitate three different Ag-Mg alloys. Quantitative EDS analysis can be difficult because the AgL escape peak occurs at the same energy (1.25 keV) as the Mg Kα peak. An EDS spectrum of a Ag-Mg alloy wire is compared to a pure Ag spectrum in Fig. 1.

Crystal chemistry of high-Tc superconductors

1990 ◽  
Vol 48 (4) ◽  
pp. 1118-1119
Author(s):  
Maryvonne Hervieu
Keyword(s):  
Oxygen Deficiency ◽  
Large Family ◽  
Copper Oxides ◽  
High Tc Superconductors ◽  
High Tc ◽  
Single Mechanism ◽  
Square Planar ◽  
History Of ◽  
Bismuth Cuprates ◽  
New Compounds

Four years after the discovery of superconductivity at high temperature in the Ba-La-Cu-O system, more than thirty new compounds have been synthesized, which can be classified in six series of copper oxides: La2CuO4 - type oxides, bismuth cuprates, YBa2Cu3O7 family, thallium cuprates, lead cuprates and Nd2CuO4 - type oxides. Despite their quite different specific natures, close relationships allow their structures to be simply described through a single mechanism. The fifth first families can indeed be described as intergrowths of multiple oxygen deficient perovskite slabs with multiple rock salt-type slabs, according to the representation [ACuO3-x]m [AO]n.The n and m values are integer in the parent structures, n varying from 0 to 3 and m from 1 to 4; every member of this large family can thus be symbolized by [m,n]. The oxygen deficient character of the perovskite slabs involves the existence or the co-existence of several types of copper environment: octahedral, pyramidal and square planar.Both mechanisms, oxygen deficiency and intergrowth, are well known to give rise easily to nonstoichiometry phenomena. Numerous and various phenomena have actually been characterized in these cuprates, strongly depending on the thermal history of the samples.

Application of silicon substrates for high-Tc Josephson junctions and SQUIDs

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-297-Pr3-300 ◽  
Author(s):  
S. Linzen ◽  
Y. J. Tian ◽  
U. Hübner ◽  
F. Schmidl ◽  
J. Scherbel ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
Silicon Substrates ◽  
High Tc
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