Graphene assisting magnetic alignment of a high-performance semiconducting polymer for improved carrier transport

2020 ◽  
Vol 117 (6) ◽  
pp. 063301
Author(s):  
Songlin Su ◽  
Guoxing Pan ◽  
Xuhua Xiao ◽  
Qi Wang ◽  
Fapei Zhang
Keyword(s):  
High Performance ◽  
Carrier Transport ◽  
Magnetic Alignment ◽  
Semiconducting Polymer

Effective Controlling of Film Texture and Carrier Transport of a High-Performance Polymeric Semiconductor by Magnetic Alignment

2015 ◽  
Vol 25 (32) ◽  
pp. 5126-5133 ◽  
Author(s):  
Guoxing Pan ◽  
Fei Chen ◽  
Lin Hu ◽  
Kejun Zhang ◽  
Jianming Dai ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Transport ◽  
Magnetic Alignment ◽  
Polymeric Semiconductor

High performance full color OLEDs based on a class of molecules with dual carrier transport channels and small singlet–triplet splitting

2015 ◽  
Vol 51 (53) ◽  
pp. 10632-10635 ◽  
Author(s):  
Chenglong Li ◽  
Shipan Wang ◽  
Weiping Chen ◽  
Jinbei Wei ◽  
Guochun Yang ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Transport ◽  
Blue Emission ◽  
Deep Blue ◽  
Full Color ◽  
Triplet Splitting ◽  
Transport Channels

The strong deep blue emission, good ambipolar carrier transport and small singlet–triplet splitting characteristics allow PPI-PPITPA and PPI-PPIPCz as emitting materials and hosts to fabricate high performance full color OLEDs.

scholarly journals Low Dark Current and Performance Enhanced Perovskite Photodetector by Graphene Oxide as an Interfacial Layer

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 190
Author(s):  
Ali Hassan ◽  
Muhammad Azam ◽  
Yeong Hwan Ahn ◽  
Muhammad Zubair ◽  
Yu Cao ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Dark Current ◽  
High Performance ◽  
Carrier Transport ◽  
Defect Density ◽  
Low Cost ◽  
Degradation Process ◽  
Device Performance ◽  
Interface Engineering ◽  
Defect Passivation

Organic–inorganic hybrid perovskite photodetectors are gaining much interest recently for their high performance in photodetection, due to excellent light absorption, low cost, and ease of fabrication. Lower defect density and large grain size are always favorable for efficient and stable devices. Herein, we applied the interface engineering technique for hybrid trilayer (TiO2/graphene oxide/perovskite) photodetector to attain better crystallinity and defect passivation. The graphene oxide (GO) sandwich layer has been introduced in the perovskite photodetector for improved crystallization, better charge extraction, low dark current, and enhanced carrier lifetime. Moreover, the trilayer photodetector exhibits improved device performance with a high on/off ratio of 1.3 × 104, high responsivity of 3.38 AW−1, and low dark current of 1.55 × 10−11 A. The insertion of the GO layer also suppressed the perovskite degradation process and consequently improved the device stability. The current study focuses on the significance of interface engineering to boost device performance by improving interfacial defect passivation and better carrier transport.

scholarly journals Atomic layer deposition triggered Fe-In-S cluster and gradient energy band in ZnInS photoanode for improved oxygen evolution reaction

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Linxing Meng ◽  
Jinlu He ◽  
Xiaolong Zhou ◽  
Kaimo Deng ◽  
Weiwei Xu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Oxygen Evolution ◽  
Oxygen Evolution Reaction ◽  
Energy Band ◽  
High Performance ◽  
Carrier Transport ◽  
Atomic Layer ◽  
Onset Potential ◽  
Layer Deposition ◽  
Gradient Energy

AbstractVast bulk recombination of photo-generated carriers and sluggish surface oxygen evolution reaction (OER) kinetics severely hinder the development of photoelectrochemical water splitting. Herein, through constructing a vertically ordered ZnInS nanosheet array with an interior gradient energy band as photoanode, the bulk recombination of photogenerated carriers decreases greatly. We use the atomic layer deposition technology to introduce Fe-In-S clusters into the surface of photoanode. First-principles calculations and comprehensive characterizations indicate that these clusters effectively lower the electrochemical reaction barrier on the photoanode surface and promote the surface OER reaction kinetics through precisely affecting the second and third steps (forming processes of O* and OOH*) of the four-electron reaction. As a result, the optimal photoanode exhibits the high performance with a significantly enhanced photocurrent of 5.35 mA cm−2 at 1.23 VRHE and onset potential of 0.09 VRHE. Present results demonstrate a robust platform for controllable surface modification, nanofabrication, and carrier transport.

Optimization of charge carrier transport balance for performance improvement of PDPP3T-based polymer solar cells prepared using a hot solution

2015 ◽  
Vol 17 (15) ◽  
pp. 9835-9840 ◽  
Author(s):  
Jian Wang ◽  
Fujun Zhang ◽  
Miao Zhang ◽  
Wenbin Wang ◽  
Qiaoshi An ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
Performance Improvement ◽  
High Performance ◽  
Carrier Transport ◽  
Polymer Solar Cells ◽  
Charge Carrier Transport

Using a hot solution may prove to be an effective method to improve the charge carrier transport for high performance PSCs.

scholarly journals Coulomb drag transistor using a graphene and MoS2 heterostructure

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Youngjo Jin ◽  
Min-Kyu Joo ◽  
Byoung Hee Moon ◽  
Hyun Kim ◽  
Sanghyup Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Passive Layer ◽  
Strong Interactions ◽  
Practical Application ◽  
Coulomb Drag ◽  
Strong Coulomb ◽  
High Carrier Mobility ◽  
High Carrier

Abstract Two-dimensional (2D) heterostructures often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, a double-layer graphene (Gr) separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag carriers in the passive layer. Here, we propose high-performance Gr/MoS2 heterostructure transistors operating via Coulomb drag, exhibiting a high carrier mobility (∼3700 cm2 V−1 s−1) and on/off-current ratio (∼108) at room temperature. The van der Waals gap at the Gr/MoS2 interface induces strong interactions between the interlayer carriers, whose recombination is suppressed by the Schottky barrier between p-Gr and n-MoS2, clearly distinct from the presence of insulating layers. The sign reversal of lateral voltage clearly demonstrates the Coulomb drag in carrier transport. Hole-like behavior of electrons in the n-MoS2 is observed in magnetic field, indicating strong Coulomb drag at low temperature. Our Coulomb drag transistor thus provides a shortcut for the practical application of 2D heterostructures.

scholarly journals Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Ju-Hung Chen ◽  
Sheng-Kuei Chiu ◽  
Jin-De Luo ◽  
Shu-Yu Huang ◽  
Hsiang-An Ting ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Transport ◽  
Deposition Process ◽  
Semiconductor Materials ◽  
Functionalized Graphene ◽  
Significant Progress ◽  
Graphene Glass ◽  
Comprehensive Characterization

Abstract Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500 nm. We here introduce a robust and facile method to deposit amorphous Sb2S3 films with a bandgap of 2.8 eV. By exploiting the tunable functionality of graphene, a two-dimensional material, efficient deposition from a chemical was achieved. Ozone-generated defects in the graphene were shown to be required to enhance the morphology and quality of the material and comprehensive characterization of the seed layer and the Sb2S3 film were applied to design an optimal deposition process. The resulting material exhibits efficient carrier transport and high photodetector performance as evidenced by unprecedented responsivity and detectivity in semiconductor/graphene/glass vertical heterostructures. (112 A/W, 2.01 × 1012 Jones, respectively).

scholarly journals Facile Growth of Porous Hematite Films for Photoelectrochemical Water Splitting

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Shaohua Shen ◽  
Jiangang Jiang ◽  
Penghui Guo ◽  
Liejin Guo
Keyword(s):  
Water Splitting ◽  
High Performance ◽  
Carrier Transport ◽  
Photoelectrochemical Water Splitting ◽  
Photon Absorption ◽  
Photoelectrochemical Activity ◽  
Simple Method ◽  
Facile Fabrication ◽  
Single Precursor ◽  
Interfacial Charge

We introduced a simple fabrication method of porous hematite films with tunable thickness in an aqueous solution containing FeCl3as the single precursor. We demonstrated that the optimized thickness was necessary for high performance photoelectrochemical water splitting, by balancing photon absorption and charge carrier transport. The highest photocurrent ofca. 0.15 mA cm−2at 1.0 V versus Ag/AgCl was achieved on the 300 nm thick porous hematite film as photoanode, with IPCE at 370 nm and 0.65 V versus Ag/AgCl to be 9.0%. This simple method allows the facile fabrication of hematite films with porous nanostructure for enabling high photon harvesting efficiency and maximized interfacial charge transfer. These porous hematite films fabricated by this simple solution-based method could be easily modified by metal doping for further enhanced photoelectrochemical activity for water splitting.

Rational design of phenoxazine-based donor–acceptor–donor thermally activated delayed fluorescent molecules with high performance

2015 ◽  
Vol 17 (30) ◽  
pp. 20014-20020 ◽  
Author(s):  
Jing Lu ◽  
Yiying Zheng ◽  
Jingping Zhang
Keyword(s):  
High Performance ◽  
Rational Design ◽  
Carrier Transport ◽  
Thermally Activated ◽  
Donor Acceptor ◽  
Fluorescent Molecules

The rational design of a novel phenoxazine-based D–B–A2–B–D TADF candidate with smaller ΔEST values and higher carrier transport.

Characterization for Organic Solid Solution and Formation of Organic Electronics

2005 ◽  
Vol 871 ◽  
Author(s):  
Yan Shao ◽  
Yang Yang
Keyword(s):  
Solid Solution ◽  
Organic Electronics ◽  
High Performance ◽  
Carrier Transport ◽  
Rapid Development ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Solid ◽  
High Temperature Processing ◽  
Stable Material

AbstractRecent two decades have seen the rapid development of organic electronics and much attention has been paid to carrier transport behavior. However, other characteristics, such as material compatibility, may be overlooked. We propose a new doping method taking advantage of fused organic solid solution, which is prepared by high-pressure and high temperature processing. In this method, the stable material systems can be selected and high performance organic light-emitting diodes with different colors have been demonstrated.

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