High performance CsPbBr3 quantum dots photodetectors by using zinc oxide nanorods arrays as an electron-transport layer

2020 ◽  
Vol 116 (16) ◽  
pp. 162103 ◽  
Author(s):  
Huaxin Wang ◽  
Pengfei Zhang ◽  
Zhigang Zang
Keyword(s):  
Quantum Dots ◽  
Zinc Oxide ◽  
Electron Transport ◽  
High Performance ◽  
Transport Layer ◽  
Zinc Oxide Nanorods ◽  
Electron Transport Layer ◽  
Oxide Nanorods ◽  
Cspbbr3 Quantum Dots

Indium Zinc Oxide Electron Transport Layer for High-Performance Planar Perovskite Solar Cells

2018 ◽  
Vol 122 (50) ◽  
pp. 28491-28496 ◽  
Author(s):  
Liang Wang ◽  
Fengjing Liu ◽  
Xiaoyong Cai ◽  
Tingli Ma ◽  
Chao Jiang
Keyword(s):  
Zinc Oxide ◽  
Solar Cells ◽  
Electron Transport ◽  
High Performance ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Indium Zinc Oxide

scholarly journals Micromesh-structured flexible polymer white organic light-emitting diodes using single emissive layer of blended polymer and quantum dots

2020 ◽  
Author(s):  
Hsin-Ying Lee
Keyword(s):  
Quantum Dots ◽  
Zinc Oxide ◽  
Electron Transport ◽  
Luminous Efficiency ◽  
Organic Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
Flexible Polymer ◽  
Organic Light

In this study, poly(N-vinylcarbazole) was blended with CdSe/ZnS core-shell quantum dots of various dimensions to be used as a single emissive layer of flexible polymer white organic light-emitting diodes (WOLEDs). A structure of WOLEDs was deposited on polyethylene terephthalate (PET) substrates. A luminance and maximum luminous efficiency of 4070.2 cd/m2 and 2.84 cd/A were respectively obtained for the WOLEDs prepared using n-type gallium zinc oxide (GZO) and n-type indium gallium zinc oxide (IGZO) films as the electron transport layer and cathode, respectively. Because the current density can be increased by increasing the carrier transport surface area, the 2-μm-periodic SiO2 micromesh was fabricated on PET substrates to enhance the surface area of a MoO3 hole transport layer and a GZO electron transport layer. Furthermore, the GZO electron transport layer could provide a moisture barrier function. Compared with WOLEDs without the SiO2 micromesh, the prepared WOLEDs had an increased current density of 404.5 (compared with 222.8) mA/cm2 when operating at 11 V. Moreover, their associated luminance and maximum luminous efficiency increased to 7016.1 cd/m2 and 3.04 cd/ A, respectively.

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