Ballistic transport and quantum unfurling in molecular junctions via minimal representations of quantum master equations

2020 ◽  
Vol 152 (18) ◽  
pp. 184112
Author(s):  
Michael Iv ◽  
Uri Peskin
Keyword(s):  
Ballistic Transport ◽  
Master Equations ◽  
Molecular Junctions ◽  
Minimal Representations

Long-range ballistic transport mechanisms in superconducting spintronics

2016 ◽  
Vol 186 (6) ◽  
pp. 640-646
Author(s):  
Alexei V. Samokhvalov ◽  
Alexander S. Mel'nikov ◽  
Alexander I. Buzdin
Keyword(s):  
Long Range ◽  
Ballistic Transport ◽  
Transport Mechanisms

Boltzmann and Master Equations for MHD in Weakly Ionized Air Plasmas

2008 ◽  
Author(s):  
Gianpiero Colonna ◽  
mario Capitelli ◽  
Lucia Daniela Pietanza ◽  
Annarita Casavola
Keyword(s):  
Master Equations ◽  
Air Plasmas ◽  
Weakly Ionized ◽  
Ionized Air

Nanoscale transistors

2017 ◽  
Author(s):  
Sandip Tiwari
Keyword(s):  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Dimensional Change ◽  
Real Space ◽  
Operational Characteristics ◽  
Statistical Variations ◽  
Channel Transport ◽  
And Control ◽  
Long Channel ◽  
Detailed Nature

This chapter brings together the physical underpinnings of field-effect transistors operating in their nanoscale limits. It tackles the change in dominant behavior from scattering-limited long-channel transport to mesoscopic and few scattering events limits in quantized channels. It looks at electrostatics and a transistor’s controllability as dimensions are shrunk—the interplay of geometry and control—and then brings out the operational characteristics in “off”-state, e.g., the detailed nature of insulator’s implications or threshold voltage’s statistical variations grounded in short-range and long-range effects, and “on”-state, where quantization, quantized channels, ballistic transport and limited scattering are important. It also explores the physical behavior for zero bandgap and monoatomic layer materials by focusing on real-space and reciprocal-space funneling as one of the important dimensional change consequences through a discussion of parasitic resistances.

Ballistic transport and quantum interference in InSb nanowire devices

2017 ◽  
Vol 26 (2) ◽  
pp. 027305 ◽  
Author(s):  
Sen Li ◽  
Guang-Yao Huang ◽  
Jing-Kun Guo ◽  
Ning Kang ◽  
Philippe Caroff ◽  
...  
Keyword(s):  
Quantum Interference ◽  
Ballistic Transport

scholarly journals Validity of Born-Markov master equations for single- and two-qubit systems

2021 ◽  
Vol 103 (21) ◽  
Author(s):  
Vasilii Vadimov ◽  
Jani Tuorila ◽  
Tuure Orell ◽  
Jürgen Stockburger ◽  
Tapio Ala-Nissila ◽  
...  
Keyword(s):  
Master Equations

scholarly journals Conductance Switching of Azobenzene-Based Self-Assembled Monolayers on Cobalt Probed by UHV Conductive-AFM.

Nanoscale ◽  
2021 ◽  
Author(s):  
Louis Thomas ◽  
Imane Arbouch ◽  
David Guérin ◽  
Xavier Wallart ◽  
Colin van Dyck ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Covalent Bond ◽  
Molecular Junctions ◽  
Self Assembled Monolayers ◽  
Conductive Afm ◽  
Conductance Switching ◽  
Assembled Monolayers ◽  
Self Assembled

We report the formation of self-assembled monolayers of a molecular photoswitch (azobenzene-bithiophene derivative, AzBT) on cobalt via a thiol covalent bond. We study the electrical properties of the molecular junctions...

scholarly journals Strain Investigation on Spin-Dependent Transport Properties of γ-Graphyne Nanoribbon Between Gold Electrodes

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yun Li ◽  
Xiaobo Li ◽  
Shidong Zhang ◽  
Liemao Cao ◽  
Fangping Ouyang ◽  
...  
Keyword(s):  
Transport Properties ◽  
High Performance ◽  
Density Functional ◽  
Strain Engineering ◽  
Molecular Junctions ◽  
Spin Splitting ◽  
Functional Theory ◽  
Spin Dependent Transport ◽  
The Density Functional Theory ◽  
Dependent Transport

AbstractStrain engineering has become one of the effective methods to tune the electronic structures of materials, which can be introduced into the molecular junction to induce some unique physical effects. The various γ-graphyne nanoribbons (γ-GYNRs) embedded between gold (Au) electrodes with strain controlling have been designed, involving the calculation of the spin-dependent transport properties by employing the density functional theory. Our calculated results exhibit that the presence of strain has a great effect on transport properties of molecular junctions, which can obviously enhance the coupling between the γ-GYNR and Au electrodes. We find that the current flowing through the strained nanojunction is larger than that of the unstrained one. What is more, the length and strained shape of the γ-GYNR serves as the important factors which affect the transport properties of molecular junctions. Simultaneously, the phenomenon of spin-splitting occurs after introducing strain into nanojunction, implying that strain engineering may be a new means to regulate the electron spin. Our work can provide theoretical basis for designing of high performance graphyne-based devices in the future.

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