scholarly journals Abrupt enhancement of spin–orbit scattering time in ultrathin semimetallic SrIrO3 close to the metal–insulator transition

APL Materials ◽  
2020 ◽  
Vol 8 (5) ◽  
pp. 051108
Author(s):  
L. Zhang ◽  
X. Jiang ◽  
X. Xu ◽  
X. Hong
Keyword(s):  
Insulator Transition ◽  
Spin Orbit ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Scattering Time

scholarly journals Lifshitz-Transition-Driven Metal-Insulator Transition in Moderately Spin-Orbit-Coupled Sr2−xLaxRhO4

2019 ◽  
Vol 123 (10) ◽  
Author(s):  
Junyoung Kwon ◽  
Minsoo Kim ◽  
Dongjoon Song ◽  
Yoshiyuki Yoshida ◽  
Jonathan Denlinger ◽  
...  
Keyword(s):  
Insulator Transition ◽  
Spin Orbit ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Lifshitz Transition

Strong and weak electron spin-orbit scattering near the metal-insulator transition

1985 ◽  
Vol 31 (7) ◽  
pp. 4715-4717 ◽  
Author(s):  
M. Osofsky ◽  
H. Tardy ◽  
M. LaMadrid ◽  
J. M. Mochel
Keyword(s):  
Electron Spin ◽  
Insulator Transition ◽  
Spin Orbit ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Weak Electron

Pressure-induced metal-insulator transition in the spin-orbit Mott insulator Ba2IrO4

2011 ◽  
Vol 84 (11) ◽  
Author(s):  
H. Okabe ◽  
N. Takeshita ◽  
M. Isobe ◽  
E. Takayama-Muromachi ◽  
T. Muranaka ◽  
...  
Keyword(s):  
Mott Insulator ◽  
Insulator Transition ◽  
Spin Orbit ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Dimensionality-driven metal–insulator transition in spin–orbit-coupled IrO2

Nanoscale ◽  
2021 ◽  
Author(s):  
E. Arias-Egido ◽  
M. A. Laguna-Marco ◽  
C. Piquer ◽  
P. Jiménez-Cavero ◽  
I. Lucas ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Magnetic Behavior ◽  
Insulator Transition ◽  
Spin Orbit ◽  
Metal Insulator Transition ◽  
Metal Insulator

IrO2 thin films with tunable electrical transport and magnetic behavior have been obtained through control of thickness.

Magnetoresistance of TTF-TCNQ

1975 ◽  
Vol 53 (17) ◽  
pp. 1593-1605 ◽  
Author(s):  
T. Tiedje ◽  
J. F. Carolan ◽  
A. J. Berlinsky ◽  
L. Weiler
Keyword(s):  
Magnetic Field ◽  
Applied Field ◽  
Energy Gap ◽  
Electronic Energy ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Peierls Transition ◽  
Scattering Time ◽  
The Magnetic Field

The magnetoresistance of TTF-TCNQ has been measured for currents along the crystallographic b axis in static fields of 50 kOe for temperatures between 17 and 98 K. For [Formula: see text] the magnetoresistance Δρ/ρ = [ρ(50 kOe) − ρ(0)]/ρ(0) is less than 0.1% in magnitude. There is a peak of about −1.4% at 52.8 ± 0.2 K. Below 50 K, Δρ/ρ is small and negative and is described reasonably well by the formula Δρ/ρ = −(1/2)(μBH/kT)2. At all temperatures Δρ/ρ was found to be approximately independent of the orientation of the applied field with respect to the current. The high temperature behavior is consistent with that expected for a metal in the short scattering time limit [Formula: see text]. We attribute the peak at 52.8 K to the suppression of the metal–insulator transition by the magnetic field, and we show why such behavior would be expected for a Peierls transition. In the low temperature region the crystal acts like a small gap semiconductor for which the –T−2 dependence of Δρ/ρ is easily understood. We note that the peak in the magnetoresistance at 52.8 K strongly suggests that the electronic energy gap goes to zero at this temperature. One is then led to conclude that the decrease in the conductivity between 58 and 53 K is due to resistive fluctuations above the metal–insulator transition.

Metal-insulator transition in the amorphous Si 1−x Au x system with a strong spin-orbit interaction

1985 ◽  
Vol 28 (1-2) ◽  
pp. 81-86 ◽  
Author(s):  
Nobuhiko Nishida ◽  
Takao Furubayashi ◽  
Masaaki Yamaguchi ◽  
Kazuo Morigaki ◽  
Hidehiko Ishimoto
Keyword(s):  
Orbit Interaction ◽  
Insulator Transition ◽  
Spin Orbit ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Spin Orbit Interaction ◽  
Amorphous Si ◽  
Strong Spin
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