Remarkable thermal rectification in pristine and symmetric monolayer graphene enabled by asymmetric thermal contact

2020 ◽  
Vol 127 (23) ◽  
pp. 235101 ◽  
Author(s):  
Pengfei Jiang ◽  
Shiqian Hu ◽  
Yulou Ouyang ◽  
Weijun Ren ◽  
Cuiqian Yu ◽  
...  
Keyword(s):  
Thermal Contact ◽  
Monolayer Graphene ◽  
Thermal Rectification

scholarly journals Experimental study of thermal rectification in suspended monolayer graphene

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Haidong Wang ◽  
Shiqian Hu ◽  
Koji Takahashi ◽  
Xing Zhang ◽  
Hiroshi Takamatsu ◽  
...  
Keyword(s):  
Experimental Study ◽  
Monolayer Graphene ◽  
Thermal Rectification

Thermal Rectification in Similar and Dissimilar Metal Contacts

1991 ◽  
Vol 113 (1) ◽  
pp. 30-36 ◽  
Author(s):  
P. F. Stevenson ◽  
G. P. Peterson ◽  
L. S. Fletcher
Keyword(s):  
Surface Roughness ◽  
Stainless Steel ◽  
Heat Flow ◽  
Thermal Contact ◽  
Thermal Contact Conductance ◽  
Contact Conductance ◽  
Thermal Rectification ◽  
Material Type ◽  
Stainless Steel 304 ◽  
Nickel 200

An investigation was conducted to verify experimentally the existence of thermal rectification and to determine the effect of surface roughness and material type. Four pairs of test specimens were evaluated: one with a smooth Nickel 200 surface in contact with a rough Nickel 200 surface, one with a smooth Stainless Steel 304 surface in contact with a rough Stainless Steel 304 surface, one with a smooth Nickel 200 surface in contact with a rough Stainless Steel 304 surface, and finally, one with a smooth Stainless Steel 304 surface in contact with a rough Nickel 200 surface. The thermal contact conductance was measured for heat flow from both the smooth to rough and rough to smooth configurations for all four pairs. The results indicate that thermal rectification is a function of surface characteristics, material type, and heat flow direction. For similar materials in contact, some thermal rectification was observed with heat flow from the rough surface to the smooth surface resulting in a higher value of contact conductance. For dissimilar materials, the thermal contact conductance was highest when the heat flow was from the Stainless Steel 304 to Nickel 200. In these cases, the surface roughness was shown to be of secondary importance.

Recent Developments in Contact Conductance Heat Transfer

1988 ◽  
Vol 110 (4b) ◽  
pp. 1059-1070 ◽  
Author(s):  
L. S. Fletcher
Keyword(s):  
Heat Transfer ◽  
Thermal Contact ◽  
Thermal Conductance ◽  
Thermal Contact Conductance ◽  
Contact Conductance ◽  
Thermal Rectification ◽  
Numerical Studies ◽  
Wide Range ◽  
Theoretical Investigations ◽  
Recent Developments

The characteristics of thermal contact conductance are increasingly important in a wide range of technologies. As a consequence, the number of experimental and theoretical investigations of contact conductance has increased. This paper reviews and categorizes recent developments in contact conductance heat transfer. Among the topics included are the theoretical/analytical/numerical studies of contact conductance for conforming surfaces and other surface geometries; the thermal conductance in such technological areas as advanced or modern materials, microelectronics, and biomedicine; and selected topics including thermal rectification, gas conductance, cylindrical contacts, periodic and sliding contacts, and conductance measurements. The paper concludes with recommendations for emerging and continuing areas of investigation.

The thermoelastic contact problem for wavy surfaces with a heat-conducting medium in interface gaps

2017 ◽  
Vol 23 (10) ◽  
pp. 1389-1406 ◽  
Author(s):  
Kostyantyn Chumak
Keyword(s):  
Contact Problem ◽  
Thermal Contact ◽  
Heat Conducting ◽  
Gap Model ◽  
Thermal Rectification ◽  
Thermoelastic Contact ◽  
Interface Gaps ◽  
Wavy Surfaces ◽  
Wavy Interface ◽  
Heat Conducting Medium

This paper presents a study on the thermoelastic contact between a wavy surface and a flat surface in the presence of a heat-conducting interstitial medium in interface gaps. The influence of applied mechanical and thermal loads on the deformation of the gaps is taken into account. The contact problem is reduced to a system of singular integro-differential equations for a temperature jump across the gaps and the height of the gaps. Solutions are obtained for the cases of thermoinsulated and heat-conducting gaps. It is shown that, in contrast to the thermoinsulated gap model, the use of the heat-conducting gap model makes it possible to construct a physically correct solution of the contact problem. It is revealed that the wavy interface with heat-conducting gaps exhibits thermal rectification. The effects of the medium’s thermal conductivity, the pressure and heat flow magnitudes and the waviness amplitude on the effective thermal contact resistance and the level of thermal rectification are analysed.

EFFECTIVE THERMAL RECTIFICATION IN SUSPENDED MONOLAYER GRAPHENE

2018 ◽  
Author(s):  
Haidong Wang ◽  
Xing Zhang ◽  
Hiroshi Takamatsu ◽  
Koji Takahashi
Keyword(s):  
Monolayer Graphene ◽  
Thermal Rectification

Hetero-Epitaxy of Group Va Metals on Sapphire

1972 ◽  
Vol 30 ◽  
pp. 492-493
Author(s):  
J. E. O'Neal ◽  
J. J. Bellina ◽  
B. B. Rath
Keyword(s):  
Thermal Contact ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Ultra High Vacuum ◽  
Backing Plate ◽  
Sapphire Substrates ◽  
Deposition Parameters ◽  
Polishing Damage ◽  
Reflection Electron Diffraction

Thin films of the bcc metals vanadium, niobium and tantalum were epitaxially grown on (0001) and sapphire substrates. Prior to deposition, the mechanical polishing damage on the substrates was removed by an in-situ etch. The metal films were deposited by electron-beam evaporation in ultra-high vacuum. The substrates were heated by thermal contact with an electron-bombarded backing plate. The deposition parameters are summarized in Table 1.The films were replicated and examined by electron microscopy and their crystallographic orientation and texture were determined by reflection electron diffraction. Verneuil-grown and Czochralskigrown sapphire substrates of both orientations were employed for each evaporation. The orientation of the metal deposit was not affected by either increasing the density of sub-grain boundaries by about a factor of ten or decreasing the deposition rate by a factor of two. The results on growth epitaxy are summarized in Tables 2 and 3.

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