scholarly journals Low temperature deformation mechanism of semiconductor single crystal and molding of Ge microlens array by direct electrical heating

AIP Advances ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 045214
Author(s):  
Kai Tokuhiro ◽  
Makoto Okano ◽  
Satoru Hachinohe ◽  
Masahiro Shimizu ◽  
Yasuhiko Shimotsuma ◽  
...  
1969 ◽  
Vol 17 (12) ◽  
pp. 1453-1457 ◽  
Author(s):  
D.H Sastry ◽  
Y.V.R.K Prasad ◽  
K.I Vasu

Materials ◽  
2018 ◽  
Vol 11 (7) ◽  
pp. 1212 ◽  
Author(s):  
Ge Zhou ◽  
Lijia Chen ◽  
Lirong Liu ◽  
Haijian Liu ◽  
Heli Peng ◽  
...  

The low-temperature superplastic tensile behavior and the deformation mechanisms of Ti-6Al-4V alloy are investigated in this paper. Through the experiments carried out, elongation to failure (δ) is calculated and a set of values are derived that subsequently includes the strain rate sensitivity exponent (m), deformation activation energy (Q) at low-temperature superplastic deformation, and the variation of δ, m and Q at different strain rates and temperatures. Microstructures are observed before and after superplastic deformation. The deformation mechanism maps incorporating the density of dislocations inside grains at temperatures of 973 and 1123 K are drawn respectively. By applying the elevated temperature deformation mechanism maps based on Burgers vector compensated grain size and modulus compensated stress, the dislocation quantities and low-temperature superplastic deformation mechanisms of Ti-6Al-4V alloy at different temperatures within appropriate processing regime are elucidated.


2020 ◽  
Vol 96 (3s) ◽  
pp. 148-153
Author(s):  
С.Д. Федотов ◽  
А.В. Бабаев ◽  
В.Н. Стаценко ◽  
К.А. Царик ◽  
В.К. Неволин

Представлены результаты изучения морфологии поверхности и структуры слоев AlN, сформированных аммиачной МЛЭ на темплейтах 3C-SiC/Si(111) on-axis- и 4° off-axis-разориентации. Опробован технологический режим низкотемпературной эпитаксии зародышевого слоя AlN на поверхности 3C-SiC(111). Среднеквадратичная шероховатость поверхности (5 х 5 мкм) слоев AlN толщиной 150 ± 50 нм составила 2,5-3,5 нм на темплейтах 3C-SiC/Si(111) on-axis и 3,3-3,5 нм на 4° off-axis. Показано уменьшение шероховатости смачивающего слоя AlN при изменении скорости роста. Получены монокристаллические слои AlN(0002) со значениями FWHM (ω-геометрия) 1,4-1,6°. The paper presents the surface morphology and crystal structure of AlN layers formed by ammonia MBE on 3C-SiC/Si(111) on-axis and 4° off-axis disorientation. It offers the technological approach of low-temperature epitaxy of the AlN nucleation layer on the 3C-SiC (111) surface. Root mean square roughness (5 х 5 |xm) of AlN layers with thickness of 150 ± 50 nm was 2,5-3,5 nm onto on-axis templates and 3.3-3.5 nm onto 4° off-axis. It appears that the RMS roughness of the AlN surface is changing with the growth rate variation. Single-crystal AlN(0002) layers with FWHM values (ω-geometry) of 1.4-1.6° have been obtained.


2017 ◽  
Vol 122 (8) ◽  
pp. 084103 ◽  
Author(s):  
E. Smirnova ◽  
A. Sotnikov ◽  
S. Ktitorov ◽  
H. Schmidt

2021 ◽  
Author(s):  
Qi Zhao ◽  
Jin-Peng Xue ◽  
Zhi-Kun Liu ◽  
Zi-Shuo Yao ◽  
Jun Tao

A mononuclear complex with long alkyl chains, [FeII(H2Bpz2)2(C9bpy)] (1; H2Bpz2 = dihydrobis(1-pyrazolyl)borate, C9bpy = 4,4'-dinonyl-2,2'-bipyridine), was synthesized. Single-crystal X-ray crystallographic studies revealed that - and - forms of the complex...


2008 ◽  
Vol 20 (46) ◽  
pp. 465223 ◽  
Author(s):  
M ElMassalami ◽  
R E Rapp ◽  
J P Sinnecker ◽  
A V Andreev ◽  
J Prokleska

2015 ◽  
Vol 466 ◽  
pp. 653-657 ◽  
Author(s):  
Yoshito Sugino ◽  
Shigeharu Ukai ◽  
Naoko Oono ◽  
Shigenari Hayashi ◽  
Takeji Kaito ◽  
...  

1995 ◽  
Vol 246 (1-2) ◽  
pp. 123-132 ◽  
Author(s):  
K. Rogacki ◽  
P. Esquinazi ◽  
E. Faulhaber ◽  
W. Sadowski

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