Subwavelength and broadband tunable topological interface state for flexural wave in one-dimensional locally resonant phononic crystal

2020 ◽  
Vol 127 (23) ◽  
pp. 235106
Author(s):  
Lei Fan ◽  
Ye He ◽  
Xue Zhao ◽  
Xiao-an Chen
2021 ◽  
pp. 101578
Author(s):  
Tian-Xue Ma ◽  
Quan-Shui Fan ◽  
Chuanzeng Zhang ◽  
Yue-Sheng Wang

Author(s):  
Edson Jansen Pedrosa de Miranda Junior ◽  
Jose Maria Campos dos Santos

Pramana ◽  
2014 ◽  
Vol 83 (6) ◽  
pp. 1003-1013
Author(s):  
ZHIQIANG FU ◽  
SHUYU LIN ◽  
SHI CHEN ◽  
XIAOJUN XIAN ◽  
CHENGHUI WANG

AIP Advances ◽  
2013 ◽  
Vol 3 (2) ◽  
pp. 022105 ◽  
Author(s):  
Il Kyu Lee ◽  
Yoon Jae Kim ◽  
Joo Hwan Oh ◽  
Yoon Young Kim

Author(s):  
Chittaranjan Nayak ◽  
Mehdi Solaimani ◽  
Alireza Aghajamali ◽  
Arafa H. Aly

In this study, we have scrutinized the frequency gap generation by changing the geometrical parameters of a one-dimensional phononic crystal. For this purpose, we have calculated the transmission coefficient of an incident acoustic wave by using the transfer matrix method. We have retained and fixed the total length of the system and changed the system internal geometry not to increase the system length too much. Another reason was to adjust the phononic band gaps and get the desired transmission properties by finding the optimum internal geometry without increasing or decreasing the total length of phononic crystals. In addition, we also propose few structures with the opportunity of applications in acoustical devices such as sonic reflectors. Our results can also be of high interest to design acoustic filters in the case that transmission of certain frequencies is necessary.


2019 ◽  
Vol 26 (02) ◽  
pp. 1850144 ◽  
Author(s):  
ARAFA H. ALY ◽  
AHMED NAGATY ◽  
Z. KHALIFA

We have theoretically obtained the transmittance properties of one-dimensional phononic crystals incorporating a piezoelectric material as a defect layer. We have used the transfer matrix method in our analysis with/without defect materials. By increasing the thickness of the defect layer, we obtained a sharp peak created within the bandgap, that indicates to the significance of defect layer thickness on the band structure. The localized modes and a particular intensity estimated within the bandgap depend on the piezoelectric material properties. By applying different quantities of an external electric field, the position of the peak shifts to different frequencies. The electric field induces a relative change in the piezoelectric thickness. Our structure may be very useful in some applications such as sensors, acoustic switches, and energy applications.


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