scholarly journals Effects of magnetic field, electric field, and magnetic anisotropic energy on the magnetic properties of Fe alloyed GaSb diluted magnetic semiconductor

AIP Advances ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 035120
Author(s):  
Mesfin Birile Woldetsadik ◽  
Pooran Singh ◽  
Chernet Amente Geffe
Keyword(s):  
Magnetic Field ◽  
Magnetic Properties ◽  
Electric Field ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Anisotropic Energy ◽  
Diluted Magnetic

Photon-Assisted Spin-Dependent Tunneling in a Magnetic-Field Tunable Diluted Magnetic Semiconductor Structure with a Nonmagnetic Barrier

SPIN ◽  
2018 ◽  
Vol 08 (01) ◽  
pp. 1840007 ◽  
Author(s):  
Chun-Lei Li ◽  
Yan Xu ◽  
Yong Guo
Keyword(s):  
Magnetic Field ◽  
Electric Field ◽  
Transmission Coefficient ◽  
Current Density ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Transmission Resonance ◽  
Small Magnetic Field ◽  
Mass Approximation ◽  
Diluted Magnetic

Using the Floquet theory and effective-mass approximation theory, we have investigated the terahertz (THz) photon-assisted transport through a magnetic-field tunable diluted magnetic semiconductor (DMS) structure with a nonmagnetic barrier under multi-physical fields, including an external magnetic field, an electric field and a THz field. It is found that a THz field and an electric field can greatly affect the transmission coefficient and current density as well as the corresponding polarizations. As a result, some asymmetric ‘Fano’ type transmission resonance appear at some specific energy. With the applied bias increasing, some quasi platforms of the polarization began to take shape. Furthermore, the transmission coefficient suppression or augmentation can be clearly seen from the variation tendency of current density. It is noteworthy that the amplitude of current–density polarization becomes larger under a THz field and a small magnetic field. These remarkable properties of spin polarization might be beneficial to the design of spin filtering devices.

Electronic and magnetic properties of the diluted magnetic semiconductor Hg1-xMnxTe1-ySey

1995 ◽  
Vol 10 (4) ◽  
pp. 463-468 ◽  
Author(s):  
V A Kulbachinskii ◽  
P D Maryanchuk ◽  
I A Churilov ◽  
M Inoue ◽  
M Sasaki ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Electronic And Magnetic Properties ◽  
Diluted Magnetic

Carrier-Concentration-Dependent Magnetic Properties of the Diluted Magnetic Semiconductor SnMnte

1989 ◽  
Vol 151 ◽  
Author(s):  
H. J. M. Swagten ◽  
S. J. E. A. Eltink ◽  
W. J. M. De Jonge
Keyword(s):  
Magnetic Properties ◽  
Low Temperature ◽  
Experimental Evidence ◽  
Carrier Concentration ◽  
Diluted Magnetic Semiconductor ◽  
Critical Concentration ◽  
Magnetic Semiconductor ◽  
Magnetic Phases ◽  
Diluted Magnetic ◽  
Ferromagnetic Interactions

ABSTRACTIn this paper experimental evidence is presented for the carrier concentration dependence of the magnetic properties of Sn0.97Mn0.03Te, yielding a critical concentration above which ferromagnetic interactions are dominant. The observed behavior can be fairly well explained within a modified RKKY-model. Preliminary experiments on the low temperature magnetic phases indicate re-entrant spinglass behavior, which is qualitatively described with the spinglass model of Sherrington and Kirkpatrick.

Effect of H Doping on The Structural and Magnetic Properties in ZnCoO Diluted Magnetic Semiconductor Thin Films

2012 ◽  
Vol 33 (4) ◽  
pp. 417-421
Author(s):  
叶展通 YE Zhan-tong ◽  
朱德亮 ZHU De-liang ◽  
马晓翠 MA Xiao-cui ◽  
吕有明 LV You-ming ◽  
柳文军 LIU Wen-jun ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Semiconductor Thin Films ◽  
Structural And Magnetic Properties ◽  
Diluted Magnetic

Influence of Cr concentration on the structural and magnetic properties of the diluted magnetic semiconductor Hg1−xCrxSe

2002 ◽  
Vol 28 (12) ◽  
pp. 880-882 ◽  
Author(s):  
V. D. Prozorovskiı̆ ◽  
I. Yu. Reshidova ◽  
A. I. Puzynya ◽  
S. Yu. Paranchych ◽  
V. R. Romanyuk
Keyword(s):  
Magnetic Properties ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Structural And Magnetic Properties ◽  
Diluted Magnetic ◽  
Cr Concentration

Structural Characterization, and Magnetic Morphological Study of Ni+2 Doped ZnO Synthesized by Combustion Reaction Application for DMS

2012 ◽  
Vol 727-728 ◽  
pp. 511-515 ◽  
Author(s):  
R. Torquato ◽  
E. Shirsath Sagar ◽  
Ruth Herta Goldsmith Aliaga Kiminami ◽  
Ana Cristina Figueiredo de Melo Costa
Keyword(s):  
Magnetic Properties ◽  
Magnetic Measurements ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Transition Metal Ions ◽  
Combustion Reaction ◽  
Second Phase ◽  
Doped Zno ◽  
Diluted Magnetic ◽  
Maximum Temperatures

ZnO is a semiconductor that can be doped with transition metal ions, and thus becomes feasible to use in the diluted magnetic semiconductor (DMS), or semiconductor with magnetic properties. In this work we have studied the influence of doping of Ni+2on the structural, morphological and magnetic properties of Zn1-xNixO system, to x = 0.07, 0.1 and 0.2 mol of Ni+2synthesized by combustion reaction. The systems were characterized by XRD, SEM and VSM. The maximum temperatures ranged from 639 K and 683 K. All systems showed a majority phase formation of ZnO, with the presence of the second phase NiO. The crystallite size for the majority phase varied between 49 and 56nm. All systems have resulted in samples with a morphology consisting of dense clusters, formed by particles pre-sintered and shaped roughly hexagonal plates. The magnetic measurements showed that the values of saturation magnetization lies between 4.6 to 28.5emu/g, remanent magnetization of 0.01 to 0.3 emu/g, coercive force values varies between 12.7 and 62.4 Oe and Curie temperature ranging from 308 to 311K.

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