Current transfer and electrical behavior of MgB2/Ta/Cu superconducting wire

2020 ◽  
Author(s):  
Irshad Ahmad ◽  
P. M. Sarun
Keyword(s):  
Current Transfer ◽  
Electrical Behavior ◽  
Superconducting Wire

Faceted antiphase boundaries in GaAs grown on Ge

1987 ◽  
Vol 45 ◽  
pp. 314-315
Author(s):  
N.-H. Cho ◽  
S. McKernan ◽  
C.B. Carter ◽  
K. Wagner
Keyword(s):  
Cross Section ◽  
Atomic Resolution ◽  
Face Centered Cubic ◽  
Electrical Behavior ◽  
Sphalerite Structure ◽  
Antiphase Boundaries ◽  
Transmission Electron ◽  
Face Centered ◽  
Quality Material ◽  
Simulated Images

Interest has recently increased in the possibility of growing III-V compounds epitactically on non-polar substrates to produce device quality material. Antiphase boundaries (APBs) may then develop in the GaAs epilayer because it has sphalerite structure (face-centered cubic with a two-atom basis). This planar defect may then influence the electrical behavior of the GaAs epilayer. The orientation of APBs and their propagation into GaAs epilayers have been investigated experimentally using both flat-on and cross-section transmission electron microscope techniques. APBs parallel to (110) plane have been viewed at the atomic resolution and compared to simulated images.Antiphase boundaries were observed in GaAs epilayers grown on (001) Ge substrates. In the image shown in Fig.1, which was obtained from a flat-on sample, the (110) APB planes can be seen end-on; the faceted APB is visible because of the stacking fault-like fringes arising from a lattice translation at this interface.

Electrical Damage Due to Low Energy Plasma Processing of GaAs Structures

1991 ◽  
Vol 223 ◽  
Author(s):  
Hans P. Zappe ◽  
Gudrun Kaufel
Keyword(s):  
Chemical Processes ◽  
Low Energy ◽  
Electrical Behavior ◽  
Rapid Thermal Anneal ◽  
High Temperature Anneal ◽  
Significant Damage ◽  
Low Energies ◽  
Long Time ◽  
Physical Plasma

ABSTRACTThe effect of numerous plasma reative ion etch and physical milling processes on the electrical behavior of GaAs bulk substrates has been investigated by means of electric microwave absorption. It was seen that plasma treatments at quite low energies may significantly affect the electrical quality of the etched semiconductor. Predominantly physical plasma etchants (Ar) were seen to create significant damage at very low energies. Chemical processes (involving Cl or F), while somewhat less pernicious, also gave rise to electrical substrate damage, the effect greater for hydrogenic ambients. Whereas rapid thermal anneal treatments tend to worsen the electrical integrity, some substrates respond positively to long-time high temperature anneal steps.

Interlayer Materials for Diffusion Bonding of Bi2Sr2Ca2Cu3Ox Superconducting Wire.

2000 ◽  
Vol 18 (3) ◽  
pp. 468-473
Author(s):  
Osamu OHASHI ◽  
Takayuki YOSHIOKA ◽  
Mitsugi YAMAGUCHI ◽  
Shunichi SUGIBUCHI
Keyword(s):  
Diffusion Bonding ◽  
Superconducting Wire

scholarly journals Impedance Spectroscopy of Lead-Free Ferroelectric Coatings

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 221
Author(s):  
Mariya Aleksandrova ◽  
Ivailo Pandiev
Keyword(s):  
Composite Coatings ◽  
Electrical Circuit ◽  
Ferroelectric Materials ◽  
Piezoelectric Transducers ◽  
Lead Free ◽  
Electrical Behavior ◽  
Oxide Composite ◽  
Before And After ◽  
Frequency Dependences ◽  
Good Agreement

This paper presents impedance measurements of ferroelectric structures involving lead-free oxide and polymer-oxide composite coatings for sensing and energy harvesting applications. Three different ferroelectric materials grown by conventional microfabrication technologies on solid or flexible substrates are investigated for their basic resonant characteristics. Equivalent electrical circuit models are applied to all cases to explain the electrical behavior of the structures, according to the materials type and thickness. The analytical results show good agreement with the experiments carried out on a basic types of excited thin-film piezoelectric transducers. Additionally, temperature and frequency dependences of the dielectric permittivity and losses are measured for the polymer-oxide composite device in relation with the surface morphology before and after introduction of the polymer to the functional film.

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