On the low temperature conduction mechanism of Ba1-xKxBiO3

2020 ◽  
Author(s):  
S. Mollah ◽  
P. Mandal ◽  
T. Sk ◽  
S. Haldar ◽  
Ajay Kumar Ghosh
Keyword(s):  
Low Temperature ◽  
Conduction Mechanism ◽  
Temperature Conduction

Study on Low Temperature Conduction Mechanism of Al Doped ZnO/SiO2/ P-Si Heterojunction

2021 ◽  
Vol 904 ◽  
pp. 363-368
Author(s):  
Xiao Yan Zhou ◽  
Bang Sheng Yin
Keyword(s):  
Activation Energy ◽  
Impedance Spectroscopy ◽  
Low Temperature ◽  
Grain Boundaries ◽  
Ac Conductivity ◽  
Spray Pyrolysis Method ◽  
Temperature Conductivity ◽  
Calculated Activation Energy ◽  
Doped Zno ◽  
Temperature Conduction

The 3 at% Al doped ZnO thin films were deposited on p-Si substrate with a native SiO2 layer by spray pyrolysis method. Low temperature conduction behaviors were studied by analysis of impedance spectroscopy and low temperature ac conductivity. The results of impedance spectroscopy showed that the grain boundaries contributed to the resistivity of Al doped ZnO/SiO2/p-Si heterojunction. The calculated activation energy was 0.073 eV for grain boundaries. The equivalent circuit to demonstrate the electrical properties of Al doped ZnO/SiO2/p-Si heterojunction was a series connection of two parallel combination circuits of a resistor and a universal capacitor. Low temperature ac conductivity measurements indicated that the conductivity increased with temperature. Low temperature conductivity mechanism was electron conductivity, and the activation energy was 0.086 eV.

Low temperature conduction in GdBa2Cu3Oy(y<6.4) films

1989 ◽  
Vol 161 (4) ◽  
pp. 447-450 ◽  
Author(s):  
Y. Ochiai ◽  
F. Nakamura ◽  
K. Senoh ◽  
T. Tamura ◽  
T. Terashima ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Conduction

Addition of TiO2 on the electrical properties of buried resistors in low-temperature cofired ceramics

2003 ◽  
Vol 18 (9) ◽  
pp. 2235-2242 ◽  
Author(s):  
Ching-Tai Cheng ◽  
Jiang-Tsair Lin ◽  
Ying-Chang Hung
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Conduction Mechanism ◽  
Calculated Data ◽  
Temperature Coefficient Of Resistance ◽  
Tunneling Barrier ◽  
Fixed Constant ◽  
Cofired Ceramics ◽  
Good Agreement ◽  
Lower Resistivity

Effects of TiO2 addition on the conduction mechanism of buried resistors in low temperature cofired ceramics were investigated. Remarkable increases in electrical resistivity and attractive decreases in the temperature coefficient of resistance were observed by the addition of TiO2 for all ratios of RuO2/glass investigated. Such significant effects can be attributed to a larger separation observed between RuO2 particles. The results were compared with the calculated data from theoretical model of tunneling barrier, showing that good agreement could be obtained. In addition, while the distance separation was taken into account as a fixed constant, it was found that the resistivity of buried resistor decreased with increasing TiO2 contents in the glass at higher weight ratios of TiO2/glass. This result implies that a substitution takes place due to the Si+4 displacement by Ti+4 in the glass, resulting in a looser network structure and a lower resistivity value.

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