Energy level tuning at the interface of inorganic and organic semiconductors

Scilight ◽  
2021 ◽  
Vol 2021 (53) ◽  
pp. 531102
Author(s):  
Aili McConnon
Keyword(s):  
Energy Level ◽  
Organic Semiconductors ◽  
Inorganic And Organic

scholarly journals Energy disorder and energy level alignment between host and dopant in organic semiconductors

2019 ◽  
Vol 2 (1) ◽  
Author(s):  
Peicheng Li ◽  
Grayson Ingram ◽  
Jae-Jin Lee ◽  
Yongbiao Zhao ◽  
Zheng-Hong Lu
Keyword(s):  
Energy Level ◽  
Organic Semiconductors ◽  
Energy Disorder ◽  
Energy Level Alignment

Photoinduced Energy-Level Realignment at Interfaces between Organic Semiconductors and Metal-Halide Perovskites

2021 ◽  
Vol 127 (24) ◽  
Author(s):  
Fengshuo Zu ◽  
Jonathan H. Warby ◽  
Martin Stolterfoht ◽  
Jinzhao Li ◽  
Dongguen Shin ◽  
...  
Keyword(s):  
Energy Level ◽  
Organic Semiconductors ◽  
Metal Halide ◽  
Halide Perovskites

Concentration dependence of the transport energy level for charge carriers in organic semiconductors

2010 ◽  
Vol 97 (14) ◽  
pp. 143302 ◽  
Author(s):  
J. O. Oelerich ◽  
D. Huemmer ◽  
M. Weseloh ◽  
S. D. Baranovskii
Keyword(s):  
Energy Level ◽  
Concentration Dependence ◽  
Organic Semiconductors ◽  
Charge Carriers

Energy level alignment of blended organic semiconductors and electrodes at the interface

2018 ◽  
Vol 18 (9) ◽  
pp. 982-992 ◽  
Author(s):  
T.J. Whitcher ◽  
W.S. Wong ◽  
A.N. Talik ◽  
K.L. Woon ◽  
A. Rusydi ◽  
...  
Keyword(s):  
Energy Level ◽  
Organic Semiconductors ◽  
Energy Level Alignment

REVERSAL OF DOPING INDUCED ENERGY LEVEL SHIFT IN ORGANIC SEMICONDUCTORS

2007 ◽  
Vol 06 (02) ◽  
pp. 125-129 ◽  
Author(s):  
HUANJUN DING ◽  
YONGLI GAO
Keyword(s):  
Electronic Structure ◽  
Energy Level ◽  
Organic Semiconductors ◽  
Energy Levels ◽  
Photoemission Spectroscopy ◽  
Level Shift ◽  
Highest Occupied Molecular Orbital ◽  
Energy Level Shift ◽  
Fine Tune ◽  
Gap State

We have investigated the electronic structure of the interface formed by depositing Au on Cs -doped and Na -doped tris(8-hydroxyquinoline) aluminum (Alq) film using ultraviolet and X-ray photoemission spectroscopy (UPS and XPS). The initial Au deposition quenches the Al q gap state caused by the alkali metal doping. Further Au depositions shift gradually the energy levels opposite to that induced by Cs doping, especially the highest occupied molecular orbital (HOMO) that shows approximately full recovery to the pristine Al q position. However, the recovery is only partial for other levels, most noticeably the C 1s core level. The results indicate that the gap state and energy level positions can be decoupled in the organic semiconductors, and that it is possible to fine tune the electronic structure by selective doping in the interface region.

Energy level alignment and morphology of interfaces between molecular and polymeric organic semiconductors

2007 ◽  
Vol 8 (5) ◽  
pp. 606-614 ◽  
Author(s):  
F.J. Zhang ◽  
A. Vollmer ◽  
J. Zhang ◽  
Z. Xu ◽  
J.P. Rabe ◽  
...  
Keyword(s):  
Energy Level ◽  
Organic Semiconductors ◽  
Energy Level Alignment
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