Fructose film tested as a natural, nonvolatile resistive switching layer

Scilight ◽  
2021 ◽  
Vol 2021 (43) ◽  
pp. 431103
Author(s):  
Leigh Ann Green
Keyword(s):  
Resistive Switching ◽  
Switching Layer

scholarly journals MEMRISTOR STRUCTURES BASED ON THIN SI3N4 LAYERS AND CHARGE TRANSPORT MECHANISM RESEARCH

2020 ◽  
Author(s):  
Oleg Orlov ◽  
Andrey Gismatulin ◽  
Vladimir Gritsenko
Keyword(s):  
Silicon Nitride ◽  
Charge Transport ◽  
Resistive Switching ◽  
Transport Mechanism ◽  
Switching Effect ◽  
Charge Transport Mechanism ◽  
Resistive Memory ◽  
Mechanism Research ◽  
Experimental Researches ◽  
Switching Layer

The article describes promising directions of development of non-volatile resistive memory ReRAM. Silicon nitride is a promising resistive switching layer for memristors. In this work we conducted an experimental researches of the switching effect and charge transport in memristores based on silicon nitride.

Selection of Switching Layer Materials for Memristive Devices: from Traditional Oxide to 2D Materials

2021 ◽  
Vol 1027 ◽  
pp. 107-114
Author(s):  
Yi Da Wang
Keyword(s):  
Electrical Properties ◽  
Resistive Switching ◽  
2D Materials ◽  
Computing System ◽  
Von Neumann ◽  
Practical Applications ◽  
Switching Layer ◽  
Selection Of ◽  
Switching Devices

Redox-based resistive switching devices (ReRAM) provide new hardware concepts which make it possible to break the von Neumann bottleneck and build a new computing system in the information. However, the materials for switching layers are various and mechanisms are quite different, these will block the further exploration for practical applications. This review tends to demonstrate different kinds of memristors fabricated with various materials, such as oxide, nitride and 2D materials. The electrical properties of those based on different materials are compared and the advantages of each are listed. It would give a guidance to the selection of materials of memristors.

Al-doped ZnO as a switching layer for transparent bipolar resistive switching memory

2014 ◽  
Vol 10 (2) ◽  
pp. 321-324 ◽  
Author(s):  
Hyeongwoo Yu ◽  
Minho Kim ◽  
Yoonsu Kim ◽  
Jeongsup Lee ◽  
Kyoung-Kook Kim ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Doped Zno ◽  
Switching Memory ◽  
Switching Layer

The strategies of filament control for improving the resistive switching performance

2020 ◽  
Vol 8 (46) ◽  
pp. 16295-16317
Author(s):  
Teng Li ◽  
Hongliang Yu ◽  
Stephenie Hiu Yuet Chen ◽  
Ye Zhou ◽  
Su-Ting Han
Keyword(s):  
Resistive Switching ◽  
Channel Design ◽  
Switching Performance ◽  
Recent Developments ◽  
Switching Layer ◽  
Switching Devices

The recent developments of filament control in resistive switching devices including electrode optimization, switching layer optimization and channel design are reviewed.

Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Characteristics

Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Hysteresis Curve ◽  
Bipolar Switching ◽  
Post Annealing ◽  
Endurance Tests ◽  
Bilayer Device ◽  
Switching Characteristics ◽  
Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

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