Features of excess conductivity and a possible pseudogap in FeSe superconductors

2020 ◽  
Vol 46 (5) ◽  
pp. 538-549 ◽  
Author(s):  
A. L. Solovjov ◽  
E. V. Petrenko ◽  
L. V. Omelchenko ◽  
E. Nazarova ◽  
K. Buchkov ◽  
...  
1995 ◽  
Vol 96 (7) ◽  
pp. 441-444 ◽  
Author(s):  
E. Isaac Samuel ◽  
S. Ravi ◽  
V. Seshu Bai
Keyword(s):  

1985 ◽  
Vol 56 ◽  
Author(s):  
F.-C. Su ◽  
S. Levine ◽  
P. E. Vanier ◽  
F. J. Kampas

AbstractAmorphous semiconductor superlattice structures consisting of alternating n-type and p-type doped layers of hydrogenated amorphous silicon (a-Si:H) have been made by silane glow discharge in a single chamber system. These multilayered films show the novel phenomenon of light-induced excess conductivity (LEC) associated with a metastable state having a lifetime of order of days. This report shows that the LEC effect is quite dependent on the specific details of the deposition parameters, namely dilution of the silane with inert gas, substrate temperature and layer thickness. In order to investigate the origin of the LEC effect, argon dilution was used for specific regions of the structure. This experiment shows that the slow states are distributed throughout the layers, and are not concentrated at the interfaces.


2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Suchitra Rajput ◽  
Sujeet Chaudhary

We report on the analyses of fluctuation induced excess conductivity in the - behavior in the in situ prepared MgB2 tapes. The scaling functions for critical fluctuations are employed to investigate the excess conductivity of these tapes around transition. Two scaling models for excess conductivity in the absence of magnetic field, namely, first, Aslamazov and Larkin model, second, Lawrence and Doniach model, have been employed for the study. Fitting the experimental - data with these models indicates the three-dimensional nature of conduction of the carriers as opposed to the 2D character exhibited by the HTSCs. The estimated amplitude of coherence length from the fitted model is ~21 Å.


2008 ◽  
Author(s):  
N. Huda ◽  
A. K. Yahya ◽  
W. F. Abdullah ◽  
H. B. Senin ◽  
G. Carini ◽  
...  
Keyword(s):  

2017 ◽  
Vol 29 (2) ◽  
pp. 1018-1024
Author(s):  
Shengnan Zhang ◽  
Jixing Liu ◽  
Jianqing Feng ◽  
Botao Shao ◽  
Chengshan Li ◽  
...  

Crystals ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 560 ◽  
Author(s):  
Kaiyao Zhou ◽  
Junjie Wang ◽  
Yanpeng Song ◽  
Liwei Guo ◽  
Jian-gang Guo

Here, crystal structure, electronic structure, chemical substitution, pressure-dependent superconductivity, and thickness-dependent properties in FeSe-based superconductors are systemically reviewed. First, the superconductivity versus chemical substitution is reviewed, where the doping at Fe or Se sites induces different effects on the superconducting critical temperature (Tc). Meanwhile, the application of high pressure is extremely effective in enhancing Tc and simultaneously induces magnetism. Second, the intercalated-FeSe superconductors exhibit higher Tc from 30 to 46 K. Such an enhancement is mainly caused by the charge transfer from the intercalated organic and inorganic layer. Finally, the highest Tc emerging in single-unit-cell FeSe on the SrTiO3 substrate is discussed, where electron-phonon coupling between FeSe and the substrate could enhance Tc to as high as 65 K or 100 K. The step-wise increment of Tc indicates that the synergic effect of carrier doping and electron-phonon coupling plays a critical role in tuning the electronic structure and superconductivity in FeSe-based superconductors.


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