Minority‐carrier lifetime in GaAs thin films

1988 ◽  
Vol 53 (7) ◽  
pp. 598-599 ◽  
Author(s):  
R. K. Ahrenkiel ◽  
D. J. Dunlavy ◽  
J. Benner ◽  
R. P. Gale ◽  
R. W. McClelland ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime

Surface Passivation of Crystalline Silicon by a-Si:H Thin Films

2014 ◽  
Vol 936 ◽  
pp. 603-606
Author(s):  
Yin Wang ◽  
Wei Li ◽  
An Ran Guo ◽  
Feng Yu ◽  
Jian He ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Rf Magnetron Sputtering ◽  
Hydrogen Flow Rate ◽  
Hydrogen Flow

Surface passivation of c-Si by a-Si:H thin films has been studied. In this paper, the minority carrier lifetime of 345μs (from 85μs) is obtained at optimal hydrogen flow rate (8.0sccm) by using RF-magnetron sputtering method.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

scholarly journals Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Marked Enhancement
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