scholarly journals Theoretical investigation of hole transport in strained III‐V semiconductors: Application to GaAs

1988 ◽  
Vol 53 (9) ◽  
pp. 785-787 ◽  
Author(s):  
J. M. Hinckley ◽  
J. Singh
Keyword(s):  
Theoretical Investigation ◽  
Hole Transport

A Molybdenum Dithiolene Complex asp-Dopant for Hole-Transport Materials: A Multitechnique Experimental and Theoretical Investigation

2010 ◽  
Vol 22 (2) ◽  
pp. 524-531 ◽  
Author(s):  
Yabing Qi ◽  
Tissa Sajoto ◽  
Michael Kröger ◽  
Alexander M. Kandabarow ◽  
Wonjun Park ◽  
...  
Keyword(s):  
Theoretical Investigation ◽  
Hole Transport

The theoretical investigation on the 4-(4-phenyl-4-α-naphthylbutadieny)-triphenylamine derivatives as hole transporting materials for perovskite-type solar cells

2015 ◽  
Vol 17 (8) ◽  
pp. 5991-5998 ◽  
Author(s):  
Wei-Jie Chi ◽  
Ze-Sheng Li
Keyword(s):  
Solar Cells ◽  
Theoretical Investigation ◽  
Hole Mobility ◽  
Hole Transport ◽  
Face To Face ◽  
Substituent Group ◽  
Hole Transporting ◽  
The Face ◽  
Perovskite Type ◽  
Hole Transporting Materials

The hole mobility of hole transport materials is improved by the face-to-face packing mode, and phenyl is an outstanding substituent group for improving hole mobility.

Measurement and Modeling of Hole Transport in Blends of N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) and the Hole-conducting Material HIM

2008 ◽  
Author(s):  
Christoph Zimmermann ◽  
Manuel Bösing ◽  
Florian Lindla ◽  
Alaa Abdellah ◽  
Frank Jessen ◽  
...  
Keyword(s):  
Hole Transport ◽  
Conducting Material

Photoconductivity in Vacuum Deposited Films of Silicon-Based Polymers

1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe
Keyword(s):  
Charge Transfer ◽  
Chemical Modification ◽  
Electronic Transport ◽  
Hole Transport ◽  
Electron Acceptors ◽  
Oxygen Atmosphere ◽  
Dangling Bonds ◽  
Silicon Based ◽  
Deposited Films

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.

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