Electron‐beam‐pumped two‐dimensional semiconductor laser array with tilted mirror resonator

1988 ◽  
Vol 52 (16) ◽  
pp. 1303-1305
Author(s):  
F. Tong ◽  
R. M. Osgood ◽  
A. Sanchez ◽  
V. Daneu
Keyword(s):  
Electron Beam ◽  
Semiconductor Laser ◽  
Two Dimensional ◽  
Laser Array

Phase locking of a two-dimensional semiconductor laser array in an external Talbot cavity

1994 ◽  
Author(s):  
Steve Sanders ◽  
Robert G. Waarts ◽  
Derek W. Nam ◽  
David F. Welch ◽  
John C. Ehlert ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Phase Locking ◽  
Two Dimensional ◽  
Laser Array

Surface‐emitting two‐dimensional coherent semiconductor laser array

1989 ◽  
Vol 55 (4) ◽  
pp. 331-333 ◽  
Author(s):  
J. Buus ◽  
P. J. Williams ◽  
I. Goodridge ◽  
D. J. Robbins ◽  
J. Urquhart ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Two Dimensional ◽  
Laser Array

High power coherent two‐dimensional semiconductor laser array

1994 ◽  
Vol 64 (12) ◽  
pp. 1478-1480 ◽  
Author(s):  
Steve Sanders ◽  
Robert Waarts ◽  
Derek Nam ◽  
David Welch ◽  
Don Scifres ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Two Dimensional ◽  
Laser Array

Phase locking of a two-dimensional semiconductor laser array in an external Talbot cavity

2002 ◽  
Author(s):  
S. Sanders ◽  
R. Waarts ◽  
D. Nam ◽  
D. Welch ◽  
J.C. Ehlert ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Phase Locking ◽  
Two Dimensional ◽  
Laser Array

Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array

2020 ◽  
Vol 41 (9) ◽  
pp. 1158-1164
Author(s):  
Bo LI ◽  
◽  
Zhen-fu WANG ◽  
Bo-cang QIU ◽  
Guo-wen YANG ◽  
...  
Keyword(s):  
High Temperature ◽  
Semiconductor Laser ◽  
High Power ◽  
Temperature Characteristic ◽  
Laser Array ◽  
Power Semiconductor

Widely tunable lasers based on mode-hop-free semiconductor laser array

2007 ◽  
Author(s):  
T. Kurobe ◽  
T. Kimoto ◽  
K. Muranushi ◽  
T. Mukaihara ◽  
M. Ariga ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Tunable Lasers ◽  
Laser Array

Sealed scanned electron-beam-excited semiconductor laser

1974 ◽  
Vol 4 (2) ◽  
pp. 242-243
Author(s):  
G S Kotovshchikov ◽  
V P Kuklev ◽  
N P Lantsov ◽  
G A Meerovich ◽  
A G Negodov ◽  
...  
Keyword(s):  
Electron Beam ◽  
Semiconductor Laser

scholarly journals Nonlinear processes in the bunched electron beams of high-power klystrons and the limits of analytical and one-dimensional numerical models applicability for their analysis.

2020 ◽  
Vol 2020 (12) ◽  
Author(s):  
V.Y. Rodyakin ◽  
◽  
V.M. Pikunov ◽  
V.N. Aksenov ◽  
◽  
...  
Keyword(s):  
Electron Beam ◽  
High Power ◽  
Numerical Models ◽  
Nonlinear Effects ◽  
Analytical Models ◽  
Modulation Amplitude ◽  
Two Dimensional ◽  
One Dimensional ◽  
Charge Parameter ◽  
Program Data

We present the results of a comparative theoretical analysis of the electron beam bunching in a single-stage klystron amplifier using analytical models, a one-dimensional disk program, and a two-dimensional program. Data on the influence of various one-dimensional and two-dimensional nonlinear effects on the efficiency of electron beam bunching at different values of the space charge parameter and the modulation amplitude are presented. The limits of applicability of analytical and one-dimensional numerical models for electron beam bunching analysis in high-power klystron amplifiers are found.

Formation Of Two-Dimensional Photonic Crystals With Cavities Arrays In Silicon

2016 ◽  
Vol 11 (1) ◽  
pp. 88-93
Author(s):  
Dmitriy Utkin ◽  
Aleksandr Shklyaev ◽  
Fedor Dultsev ◽  
Aleksandr Latyshev
Keyword(s):  
Electron Beam ◽  
Photonic Crystals ◽  
Electron Beam Lithography ◽  
Spatial Distributions ◽  
Two Dimensional ◽  
Interference Effects ◽  
Technological Parameters ◽  
Beam Interaction ◽  
Cavity Array ◽  
Better Than

Specific aspects of finely focused electron beam interaction with the PMMA-950K resist for the fabrication of closely spaced holes having inhomogeneous spatial distributions are studied. The technological parameters for the creation of two-dimensional photonic crystals with microcavities (missing holes) arrays, which allow obtaining the lateral sizes of the structure within the accuracy better than 2 %, in silicon using electron-beam lithography are determined. Such holes fabrication accuracy is thought to be sufficient to study the interference effects of cavity array radiation in twodimensional photonic crystals.

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