Very low threshold planar buried heterostructure InGaAsP/InP laser diodes prepared by three‐stage metalorganic chemical vapor deposition
2004 ◽
Vol 43
(8A)
◽
pp. 5262-5268
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1992 ◽
Vol 31
(Part 1, No. 10)
◽
pp. 3292-3295
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1993 ◽
Vol 29
(6)
◽
pp. 1528-1535
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2005 ◽
Vol 44
(10)
◽
pp. 7485-7487
◽
1996 ◽
Vol 158
(4)
◽
pp. 418-424
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