Very low threshold planar buried heterostructure InGaAsP/InP laser diodes prepared by three‐stage metalorganic chemical vapor deposition

1987 ◽  
Vol 51 (12) ◽  
pp. 874-876 ◽  
Author(s):  
H. Ishiguro ◽  
T. Kawabata ◽  
S. Koike
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