Nature of the self‐limiting effect in the low‐pressure chemical vapor deposition of tungsten

1987 ◽  
Vol 51 (13) ◽  
pp. 967-969 ◽  
Author(s):  
N. Lifshitz
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
The Self ◽  
Pressure Chemical

Proximity Effect in the Low Pressure Chemical Vapor Deposition of Tungsten.

1988 ◽  
Vol 131 ◽  
Author(s):  
N. Lifshitz
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Blocking Agent ◽  
The Self ◽  
Tungsten Hexafluoride ◽  
Pressure Chemical ◽  
Tungsten Surface ◽  
Selection Of

ABSTRACTThe self-limiting effect during Low Pressure Chemical Vapor Deposition of tungsten is manifested by a sudden interruption of the reduction of tungsten hexafluoride WF6 by silicon, so that only very thin (self-limited) films of silicon-reduced tungsten can be grown. It has been shown that the self-limiting effect is caused by formation of the non-volatile subfluoride WF4. The temperature dependence of the self-limiting thickness of the tungsten films grown in a hot-wall reactor exhibits a characteristic maximum at temperatures near 350°C, which indicates that at this temperature the rate of formation of WF4 is lower than at temperatures above and below. In the present paper we attempt to explain this peculiar dependence. We suggest a mechanism responsible for formation of the blocking agent WF4. We demonstrate that the presence of a hot tungsten surface is essential for the strong self-limiting effect. This leads us to the discussion of the proper selection of the reactor type (hot-wall vs. cold-wall) for different process requirements.

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection

Low-pressure chemical vapor deposition of silicon dioxide using diethylsilane

1993 ◽  
Vol 5 (12) ◽  
pp. 1710-1714 ◽  
Author(s):  
R. A. Levy ◽  
J. M. Grow ◽  
G. S. Chakravarthy
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical
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