High power, high efficiency window buried heterostructure GaAlAs superluminescent diode with an integrated absorber

1987 ◽  
Vol 51 (23) ◽  
pp. 1879-1881 ◽  
Author(s):  
Norman S. K. Kwong ◽  
Kam Y. Lau ◽  
Nadav Bar‐Chaim ◽  
Israel Ury ◽  
Kevin J. Lee
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Superluminescent Diode ◽  
Buried Heterostructure

High‐power, high‐efficiency 1.3 μm superluminescent diode with a buried bent absorbing guide structure

1989 ◽  
Vol 54 (18) ◽  
pp. 1719-1721 ◽  
Author(s):  
Haruo Nagai ◽  
Yoshio Noguchi ◽  
Shoichi Sudo
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Superluminescent Diode

Progress in high-power high-efficiency VCSEL arrays

2009 ◽  
Author(s):  
Jean-Francois Seurin ◽  
Guoyang Xu ◽  
Viktor Khalfin ◽  
Alexander Miglo ◽  
James D. Wynn ◽  
...  
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Vcsel Arrays

scholarly journals Near-field thermophotovoltaics for efficient heat to electricity conversion at high power density

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rohith Mittapally ◽  
Byungjun Lee ◽  
Linxiao Zhu ◽  
Amin Reihani ◽  
Ju Won Lim ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Near Field ◽  
Electrical Power ◽  
Photovoltaic Cells ◽  
High Power Density ◽  
Pv Cell ◽  
Electrical Power Output ◽  
Power Densities

AbstractThermophotovoltaic approaches that take advantage of near-field evanescent modes are being actively explored due to their potential for high-power density and high-efficiency energy conversion. However, progress towards functional near-field thermophotovoltaic devices has been limited by challenges in creating thermally robust planar emitters and photovoltaic cells designed for near-field thermal radiation. Here, we demonstrate record power densities of ~5 kW/m2 at an efficiency of 6.8%, where the efficiency of the system is defined as the ratio of the electrical power output of the PV cell to the radiative heat transfer from the emitter to the PV cell. This was accomplished by developing novel emitter devices that can sustain temperatures as high as 1270 K and positioning them into the near-field (<100 nm) of custom-fabricated InGaAs-based thin film photovoltaic cells. In addition to demonstrating efficient heat-to-electricity conversion at high power density, we report the performance of thermophotovoltaic devices across a range of emitter temperatures (~800 K–1270 K) and gap sizes (70 nm–7 µm). The methods and insights achieved in this work represent a critical step towards understanding the fundamental principles of harvesting thermal energy in the near-field.

Design of a cascade high-power source with high efficiency

2018 ◽  
Author(s):  
Gangxiong Wu ◽  
Yanyu Wei ◽  
Qian Li ◽  
Xia Lei ◽  
Chong Ding ◽  
...  
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Power Source
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