Lasing wavelength of an asymmetric double quantum well laser diode

1987 ◽  
Vol 51 (4) ◽  
pp. 209-211 ◽  
Author(s):  
Yasunori Tokuda ◽  
Teruhito Matsui ◽  
Kenzo Fujiwara ◽  
Noriaki Tsukada ◽  
Takashi Nakayama
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Double Quantum ◽  
Lasing Wavelength ◽  
Quantum Well Laser ◽  
Double Quantum Well

GaAs double quantum well laser diode with short‐period (AlGaAs)m(GaAs)nsuperlattice barriers

1989 ◽  
Vol 54 (15) ◽  
pp. 1388-1390 ◽  
Author(s):  
H. Imamoto ◽  
F. Sato ◽  
K. Imanaka ◽  
M. Shimura
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Double Quantum ◽  
Quantum Well Laser ◽  
Double Quantum Well ◽  
Short Period

Wavelength and threshold current variation in inhomogeneously pumped InGaAs/AlGaAs single and double quantum well ridge wave-guide lasers

1992 ◽  
Vol 70 (10-11) ◽  
pp. 908-913
Author(s):  
K. A. McGreer ◽  
D. Moss ◽  
R. L. Williams ◽  
M. Dion ◽  
D. Landheer
Keyword(s):  
Quantum Well ◽  
Threshold Current ◽  
Wave Guide ◽  
Double Quantum ◽  
Wavelength Shift ◽  
Exponential Dependence ◽  
Lasing Wavelength ◽  
Output Wavelength ◽  
Double Quantum Well ◽  
Current Variation

We investigate the wavelength and threshold current variation with passive wave-guide length in inhomogeneously pumped single and double quantum well InGaAs/AlGaAs strained layer ridge wave-guide lasers. We observe a linear and extremely low increase in threshold current with unpumped length, both for single and double quantum well lasers. A large red shift in the lasing wavelength as the unpumped length is increased is also observed. We present a model, based on absorption saturation in the unpumped section, which describes both the wavelength shift and the threshold current variation. The increase in threshold current that we observe is much smaller than results reported in the literature for GaAs/AlGaAs lasers, where a large exponential dependence was attributed to gain saturation in the pumped section. Because the threshold current does not dramatically vary with unpumped length for our lasers, this is a potentially useful technique for shifting the output wavelength of the laser. Finally, we investigate the wavelength tuning behavior of lasers having two segments pumped with different currents. A wavelength tunability of ~13 nm for the DQW laser was observed.

Simulation and optimization of deep violet InGaN double quantum well laser

2012 ◽  
Vol 285 (5) ◽  
pp. 746-750 ◽  
Author(s):  
Gh. Alahyarizadeh ◽  
A.J. Ghazai ◽  
R. Rahmani ◽  
H. Mahmodi ◽  
Z. Hassan
Keyword(s):  
Quantum Well ◽  
Double Quantum ◽  
Simulation And Optimization ◽  
Quantum Well Laser ◽  
Double Quantum Well ◽  
Deep Violet

Improved Characteristic Temperature (TO) of a 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode Through Thermal Annealing

1999 ◽  
Vol 597 ◽  
Author(s):  
T. Kitatani ◽  
M. Kondow ◽  
K. Nakahara ◽  
K. Uomi ◽  
T. Tanaka
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Laser Diode ◽  
Continuous Wave ◽  
Characteristic Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Lasing Wavelength ◽  
Quantum Well Laser ◽  
Continuous Wave Operation

AbstractThrough optimal thermal annealing of the active region of a 1.3 μm GaInNAs/GaAs single-quantum-well laser diode, we obtained a characteristic temperature (T0) of 215 K under pulsed operation from 20°C to 80°C. This is the highest yet reported value for a 1.3-μm semiconductor laser. Even under continuous-wave operation, the T0 was as high as 147 K. The lasing-wavelength change with temperature was as small as 0.39 nm/°C, indicating the excellent stability for a GalnNAs laser diode with T0 of over 200 K. These results demonstrate that GaInNAs is a promising material for fabricating long-wavelength laser diodes used for opticalfiber communications.

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