Observation of millimeter‐wave oscillations from resonant tunneling diodes and some theoretical considerations of ultimate frequency limits

1987 ◽  
Vol 50 (6) ◽  
pp. 332-334 ◽  
Author(s):  
T. C. L. G. Sollner ◽  
E. R. Brown ◽  
W. D. Goodhue ◽  
H. Q. Le
Keyword(s):  
Millimeter Wave ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Theoretical Considerations

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

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