Electronic properties of In0.53Ga0.47As‐InP single quantum wells grown by chemical beam epitaxy
1983 ◽
2005 ◽
Vol 38
(4-6)
◽
pp. 455-463
◽
1993 ◽
Vol 80-81
◽
pp. 747-750
◽
2019 ◽
Vol 58
(SC)
◽
pp. SCCB09
◽
Keyword(s):
Keyword(s):