Visible, room‐temperature, surface‐emitting laser using an epitaxial Fabry–Perot resonator with AlGaAs/AlAs quarter‐wave high reflectors and AlGaAs/GaAs multiple quantum wells

1987 ◽  
Vol 50 (18) ◽  
pp. 1225-1227 ◽  
Author(s):  
P. L. Gourley ◽  
T. J. Drummond
1991 ◽  
Vol 59 (9) ◽  
pp. 1108-1110 ◽  
Author(s):  
Kezhong Hu ◽  
Li Chen ◽  
Anupam Madhukar ◽  
Ping Chen ◽  
K. C. Rajkumar ◽  
...  

2000 ◽  
Vol 77 (7) ◽  
pp. 975 ◽  
Author(s):  
T. Makino ◽  
C. H. Chia ◽  
Nguen T. Tuan ◽  
H. D. Sun ◽  
Y. Segawa ◽  
...  

2006 ◽  
Vol 89 (21) ◽  
pp. 211122 ◽  
Author(s):  
C. Reith ◽  
S. J. White ◽  
M. Mazilu ◽  
A. Miller ◽  
J. Konttinen ◽  
...  

1999 ◽  
Vol 86 (7) ◽  
pp. 3734-3744 ◽  
Author(s):  
A. Miller ◽  
P. Riblet ◽  
M. Mazilu ◽  
S. White ◽  
T. M. Holden ◽  
...  

2001 ◽  
Vol 692 ◽  
Author(s):  
F. Zhao ◽  
H. Wu ◽  
T. Zheng ◽  
P. J. McCann ◽  
A. Majumdar ◽  
...  

AbstractPbSe/PbSrSe multiple-quantum-well (MQW) structures and PbSrSe thin films were grown on BaF2 (111) substrates by molecular beam epitaxy (MBE) and characterized by Fourier transform infrared (FTIR) spectrometer. Strong photoluminescence without Fabry-Perot interference fringes was observed even at room temperature from the MQW structures. The peak energies for the MQW structures with different well widths shifted to high energy with increasing temperature. The absorption edge of PbSrSe layer was determined by transmission spectra. Meanwhile, we designed and fabricated λ=4.1 μm MQW vertical cavity surface emitting laser (VCSEL). A power output of 40 mW was obtained at room temperature. The room temperature threshold pump density is 200 kW/cm2.


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