Dependence of resonant tunneling current on Al mole fractions in AlxGa1−xAs‐GaAs‐AlxGa1−xAs double barrier structures

1987 ◽  
Vol 50 (21) ◽  
pp. 1503-1505 ◽  
Author(s):  
Masahiro Tsuchiya ◽  
Hiroyuki Sakaki
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Current ◽  
Double Barrier

RESONANT TUNNELING IN DOUBLE BARRIER SEMICONDUCTOR NANO-STRUCTURES

1995 ◽  
Vol 09 (23) ◽  
pp. 3039-3051
Author(s):  
DILIP K. ROY ◽  
AJIT SINGH
Keyword(s):  
Quantum Measurement ◽  
Current Density ◽  
Resonant Tunneling ◽  
Tunneling Current ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Nano Structures ◽  
Current Densities ◽  
Double Barrier Resonant Tunneling ◽  
Measurement Approach

The principles of operation of a double barrier resonant tunneling diode (DBRTD) giving rise to negative differential conductivity effect are first reviewed. Next, the physics of resonant tunneling based on (i) the time-independent conventional approach and (ii) the time-dependent quantum measurement approach, as applied to a DBRTD, is discussed. Expressions for the resonant tunneling current densities through the barriers are then derived on the ideas of quantum measurement. Through the well the current, however, flows by the conventional mechanism. The three current density magnitudes are found to be identical under resonant conditions. Finally, an expression for the resonant tunneling current density due to a group of incident electrons is derived.

SINGLE-ELECTRON TUNNELING IN DOUBLE-BARRIER NANOSTRUCTURES

1992 ◽  
Vol 06 (13) ◽  
pp. 2321-2343 ◽  
Author(s):  
V.J. GOLDMAN ◽  
BO SU ◽  
J.E. CUNNINGHAM
Keyword(s):  
Coulomb Blockade ◽  
Resonant Tunneling ◽  
Electron Tunneling ◽  
Tunneling Current ◽  
Theoretical Models ◽  
Single Electron ◽  
Double Barrier ◽  
Current Voltage ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

We review experimental study of charge transport in nanometer double-barrier resonant tunneling devices. Heterostructure material is asymmetric: one barrier is substantially less transparent than the other. Resonant tunneling through size-quantized well states and single-electron charging of the well are thus largely separated in the two bias polarities. When the emitter barrier is more transparent than the collector barrier, electrons accumulate in the well; incremental electron occupation of the well is accompanied by Coulomb blockade leading to sharp steps of the tunneling current. When the emitter barrier is less transparent, the current reflects resonant tunneling of just one electron at a time through size-quantized well states; the current peaks and/or steps (depending on experimental parameters) appear in current-voltage characteristics. Magnetic field and temperature effects are also reviewed. Good agreement is achieved in comparison of many features of experimental data with simple theoretical models.

scholarly journals Transverse Patterns in the Bistable Resonant Tunneling Systems Under Ballistic Lateral Transport

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 481-487
Author(s):  
V. A. Kochelap ◽  
B. A. Glavin ◽  
V. V. Mitin
Keyword(s):  
Numerical Simulations ◽  
Theoretical Investigation ◽  
Resonant Tunneling ◽  
Tunneling Current ◽  
Small Region ◽  
Variational Procedure ◽  
Lateral Transport ◽  
Double Barrier ◽  
Wide Range ◽  
Bistability Region

We report the theoretical investigation of the phenomenon of the formation of patterns transverse to the tunneling current in resonant tunneling double-barrier heterostructures in the case of wide range of bistable voltages. In contrast to the case of the patterns in the structures with small region of bistability, for pronounced bistability electron lateral transport is strongly nonlocal. We performed numerical simulations of the stationary and mobile patterns using special variational procedure. Our results revealed that though the possible types of patterns remains the same as for the structures with small bistability region, their characteristics are modified considerably.

Γ‐ andX‐state influences on resonant tunneling current in single‐ and double‐barrier GaAs/AlAs structures

1989 ◽  
Vol 54 (14) ◽  
pp. 1341-1343 ◽  
Author(s):  
Kenneth V. Rousseau ◽  
K. L. Wang ◽  
J. N. Schulman
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Current ◽  
Double Barrier

SEQUENTIAL VERSUS COHERENT TUNNELING MECHANISMS DISTINGUISHED IN I-V CHARACTERISTICS

1992 ◽  
Vol 06 (28) ◽  
pp. 1811-1817
Author(s):  
L.Y. CHEN ◽  
C.S. TING
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Current ◽  
Resonance Region ◽  
Double Barrier ◽  
Scattering Rate ◽  
Region I ◽  
Double Barrier Resonant Tunneling ◽  
Resonant Tunneling Structure ◽  
Coherent Tunneling ◽  
Tunneling Transport

The I–V characteristics of a 3D double-barrier resonant-tunneling structure is investigated to demonstrate the differences between coherent and sequential tunneling mechanisms. Increasing the ratio of phase-breaking scattering rate over tunneling broadening width from 0 to ∞, tunneling transport goes from the coherent to the sequential limit. In the first resonance region, I–V curve does not distinguish these two processes. In the second and higher resonance regimes, however, sequential tunneling current becomes appreciably larger than its coherent counterpart.

Effect of scattering on the resonant‐tunneling current in double‐barrier structures

1994 ◽  
Vol 75 (3) ◽  
pp. 1829-1831 ◽  
Author(s):  
Nanzhi Zou ◽  
Q. Chen ◽  
M. Willander
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Current ◽  
Double Barrier
Sign in / Sign up

Export Citation Format

Share Document