Assessment of lattice relaxation effects in transitions from mobility gap states in hydrogenated amorphous silicon using transient photocapacitance techniques

1986 ◽  
Vol 49 (12) ◽  
pp. 722-724 ◽  
Author(s):  
A. V. Gelatos ◽  
J. D. Cohen ◽  
J. P. Harbison
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Lattice Relaxation ◽  
Relaxation Effects ◽  
Gap States ◽  
Hydrogenated Amorphous ◽  
Mobility Gap

Stability in Amorphous Silicon

1987 ◽  
Vol 95 ◽  
Author(s):  
Z E. Smith ◽  
S. Wagner
Keyword(s):  
Electron Spin Resonance ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Recovery ◽  
Defect States ◽  
Spin Resonance ◽  
Resonance Data ◽  
Electron Spin Resonance Data ◽  
Gap States ◽  
Hydrogenated Amorphous

AbstractThe experimental phenomena associated with light-induced degradation and thermal recovery of hydrogenated amorphous silicon (a-Si:H) films are reviewed, with special emphasis on the limitations of each experimental technique. When several techniques are used in concert, a fuller picture emerges. Recent experiments suggest different positions in the band-gap of the paramagnetic-associated defect states (the dangling bonds) for doped and undopedfilms; this information can be combined with conductivity, sub-bandgap optical absorption and electron spin resonance data to yield a model for the density of gap states (DOS) in a- Si:H, including how the DOS changes upon illumination and annealing.

Change of Spin-Lattice Relaxation Time with Light Soaking for Defects in Hydrogenated Amorphous Silicon

1998 ◽  
Vol 37 (Part 1, No. 10) ◽  
pp. 5470-5473
Author(s):  
Wei-Chi Lai ◽  
Chun-Yen Chang ◽  
Meiso Yokoyama ◽  
Jen-Dar Guo ◽  
Jian-Shihn Tsang ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Lattice Relaxation ◽  
Lattice Relaxation Time ◽  
Spin Lattice Relaxation ◽  
Spin Lattice Relaxation Time ◽  
Spin Lattice ◽  
Hydrogenated Amorphous
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