Measurement of electrical characteristics and electron density in a fast discharge pumped XeCl excimer laser

1986 ◽  
Vol 48 (24) ◽  
pp. 1639-1641 ◽  
Author(s):  
J. E. Ford ◽  
J. Meyer ◽  
H. Houtman
2000 ◽  
Vol 28 (1) ◽  
pp. 24-28 ◽  
Author(s):  
Junichi SHIDA ◽  
Naoyuki KOBAYASHI ◽  
Hideaki KUSAMA

1991 ◽  
Vol 111 (4) ◽  
pp. 46-51 ◽  
Author(s):  
Hisato Okuda ◽  
Kazuhisa Katayama ◽  
Xiaojun Wang ◽  
Katsumi Masugata ◽  
Kiyoshi Yatsui

1991 ◽  
Vol 236 ◽  
Author(s):  
A. Slaoui ◽  
M. Elliq ◽  
H. Pattyn ◽  
E. Fogarassy ◽  
S. De Unamuno ◽  
...  

AbstractThis work describes phosphorus (P) and boron (B) doping of polysilicon filns deposited on quartz. Doping is achieved by means of a pulsed ArF excimer laser to melt a controlled thickness of amorphous or polycristalline silicon film coated with a spinon silicate glass (SOG) film containing the dopant (P or B). We have investigated the influence of doping parameters such as laser fluence, number of shots and dopant film thickness on the sheet resistance and the incorporation rate. From these results, we have shown that high doped, shallow junctions presenting sheet resistance lower than 5 kΩ/∠ can be obtained. Poly-Si TFT's with good electrical characteristics were successfully fabricated using this doping technique.


1995 ◽  
Vol 66 (11) ◽  
pp. 5162-5164 ◽  
Author(s):  
Tatsumi Goto ◽  
Koji Kakizaki ◽  
Shigeyuki Takagi ◽  
Noboru Okamoto ◽  
Saburo Sato ◽  
...  

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