Measurement of excited‐state densities during high‐current operation of a hydrogen thyratron using laser‐induced fluorescence

1986 ◽  
Vol 48 (26) ◽  
pp. 1773-1775 ◽  
Author(s):  
D. A. Erwin ◽  
M. A. Gundersen
Keyword(s):  
Excited State ◽  
Laser Induced Fluorescence ◽  
High Current ◽  
Current Operation ◽  
State Densities

Exploration of Ultra-High Current Operation in PEFC Using a Validated Model

2019 ◽  
Vol 41 (1) ◽  
pp. 229-240
Author(s):  
Lijuan Zheng ◽  
Abdul-Kader Srouji ◽  
Filippo Gambini ◽  
Matthew Mench
Keyword(s):  
High Current ◽  
Current Operation

ROLE OF DISLOCATIONS IN InGaN-BASED LEDs AND LASER DIODES

2000 ◽  
Vol 10 (01) ◽  
pp. 271-279 ◽  
Author(s):  
SHUJI NAKAMURA
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Transverse Mode ◽  
High Current ◽  
Single Quantum Well ◽  
Cw Operation ◽  
Current Operation ◽  
Composition Fluctuations

UV InGaN and GaN single-quantum-well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown (ELOG) and sapphire substrates. When the emission wavelength of UV InGaN LEDs was shorter than 380 nm, the external quantum efficiency (EQE) of the LED on ELOG was much higher than that on sapphire only at high-current operation. At low-current operation, both LEDs had the same EQE. When the active layer was GaN, EQE of the LED on sapphire was much lower than that on ELOG at both low- and high-current operation due to the lack of localized energy states formed by In composition fluctuations. In order to improve the lifetime of laser diodes (LDs), ELOG had to be used because the operating current density of the LDs is much higher than that of LEDs. A violet InGaN multi-quantum-well GaN/AlGaN separate-confinement-heterostructure LD was grown on ELOG on sapphire. The LDs with cleaved mirror facets shows an output power as high as 40 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed at an output power of up to 40 mW. The estimated lifetime of the LDs at a constant output power of 10 mW was more than 2,000 hours under CW operation at an ambient temperature of 60°C.

Output power saturation of BH laser under high current operation

1982 ◽  
Vol 18 (12) ◽  
pp. 501 ◽  
Author(s):  
Y. Nakano ◽  
K. Takahei ◽  
Y. Noguchi ◽  
Y. Suzuki ◽  
H. Nagai
Keyword(s):  
Output Power ◽  
High Current ◽  
Current Operation ◽  
Output Power Saturation

scholarly journals High-current operation of vertical-type organic transistor with preferentially oriented molecular film

AIP Advances ◽  
2016 ◽  
Vol 6 (4) ◽  
pp. 045010 ◽  
Author(s):  
Hirohiko Fukagawa ◽  
Yasuyuki Watanabe ◽  
Kazuhiro Kudo ◽  
Jun-ichi Nishida ◽  
Yoshiro Yamashita ◽  
...  
Keyword(s):  
High Current ◽  
Organic Transistor ◽  
Molecular Film ◽  
Current Operation

Electron-driven excitation of O2 under night-time auroral conditions: Excited state densities and band emissions

2006 ◽  
Vol 54 (1) ◽  
pp. 45-59 ◽  
Author(s):  
D.B. Jones ◽  
L. Campbell ◽  
M.J. Bottema ◽  
P.J.O. Teubner ◽  
D.C. Cartwright ◽  
...  
Keyword(s):  
Excited State ◽  
Night Time ◽  
State Densities

Laser‐induced Fluorescence Spectroscopy of CoS: Identification of a New Excited State Arising from the Ground State

2013 ◽  
Vol 26 (6) ◽  
pp. 701-704 ◽  
Author(s):  
Jian‐zheng Zang ◽  
Qun Zhang ◽  
De‐ping Zhang ◽  
Cheng‐bing Qin ◽  
Qiang Zhang ◽  
...  
Keyword(s):  
Excited State ◽  
Fluorescence Spectroscopy ◽  
Ground State ◽  
Laser Induced Fluorescence

Chip on Board Packaging and Thermal Solutions for a 100 W Large Monolithic LED

2009 ◽  
Vol 6 (2) ◽  
pp. 143-148
Author(s):  
Jay G. Liu ◽  
Daxi Xiong ◽  
Paul Panaccione
Keyword(s):  
Power Systems ◽  
Thermal Resistance ◽  
Input Power ◽  
High Current ◽  
Large Area ◽  
Die Attach ◽  
Total Input ◽  
Thermal Solution ◽  
Current Operation ◽  
Heat Spreading

Thermal challenges are now widely recognized as one of the key barriers to LED's fast penetration to broader market. This paper demonstrates an effective packaging and thermal solution for a commercial realization of a large area monolithic LED of 12 mm2, with high current operation and total input power as high as 100 W. A direct chip on board (COB) die attach method was used to eliminate one level of interface such as existed in an SMD LED on an insulated metal substrate. High thermal conductivity LED submount and copper core board were designed for effective heat spreading without a dielectric in the thermal path. The thermal resistance of the 12 mm2 LED from junction to heat sink, including core board and associated TIM1 and TIM2, is as low as 0.7°C/W. A thermal model was developed using FEA to describe the temperature and thermal resistance at each interface, and is shown to be in agreement with measured data. The LED chipsets described here have been used to power systems such as rear projection TVs and front projectors.

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