scholarly journals A new method for solving the ground‐state problem in arbitrary quantum wells: Application to electron‐hole quasi‐bound levels in quantum wells under high electric field

1986 ◽  
Vol 48 (6) ◽  
pp. 434-436 ◽  
Author(s):  
Jasprit Singh
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Ground State ◽  
High Electric Field ◽  
New Method ◽  
Electron Hole ◽  
State Problem ◽  
Arbitrary Quantum

BUILT-IN ELECTRIC FIELD EFFECT ON DONOR IMPURITIES IN STRAINED WURTZITE GaN/AlGaN ASYMMETRIC DOUBLE QUANTUM WELLS

2012 ◽  
Vol 26 (26) ◽  
pp. 1250172 ◽  
Author(s):  
JUN ZHU ◽  
SHI LIANG BAN ◽  
SI HUA HA
Keyword(s):  
Variational Method ◽  
Electric Field ◽  
Quantum Wells ◽  
Ground State ◽  
Field Effect ◽  
Binding Energies ◽  
Double Quantum ◽  
Electric Field Effect ◽  
Material Parameters ◽  
Asymmetric Double Quantum Wells

The ground state binding energies of donor impurities in strained [0001]-oriented wurtzite GaN / Al x Ga 1-x N asymmetric double quantum wells are investigated using a variational method combined with numerical computation. The built-in electric field due to the spontaneous and strain-induced piezoelectric polarization and the strain modification on material parameters are taken into account. The variations of binding energies versus the width of central barrier, the ratio of two well widths, and the impurity position are presented, respectively. It is found that the built-in electric field causes a mutation of binding energies with increasing the width of central barrier to some value. The results for symmetrical double quantum wells and without the built-in electric field are also discussed for comparison.

New Poly-Si TFT'S with Selectively Doped Region in The Channel

1999 ◽  
Vol 558 ◽  
Author(s):  
Min-Cheol Lee ◽  
Jae-hong Jeon ◽  
Juhn-suk Yoo ◽  
Kee-chan Park ◽  
Min-koo Han ◽  
...  
Keyword(s):  
Experimental Data ◽  
Electric Field ◽  
Leakage Current ◽  
Considerable Improvement ◽  
High Electric Field ◽  
Electron Hole ◽  
Current Ratio ◽  
Large Leakage Current

ABSTRACTWe propose new poly-Si TFT's with selectively doped region in the center of channel in order to reduce large leakage current. In proposed TFT's, the selectively doped region redistributes total induced electric field in the channel. For VGS<0, VDS> 0 in the n-channel proposed TFT's, most of the high electric field applies in the depletion regions which exist the drain/undoped region and undoped region/selectively doped region which faces to the source. Comparing with conventional TFT's, the electric field induced near the drain junction reduces to about 1/2, therefore, electron-hole pairs generated in drain junction are considerably reduced. Furthermore, the ON-current of proposed TFT's is the same or slightly lower than that of conventional ones. Consequently, the experimental data show the considerable improvement of the ON/OFF current ratio.

INFLUENCE OF ELECTRIC FIELD ON THE BINDING ENERGY OF HYDROGENIC IMPURITY WITH SPATIALLY DEPENDENT MASS IN NITRIDE PARABOLIC QUANTUM WELLS

2007 ◽  
Vol 21 (05) ◽  
pp. 279-286 ◽  
Author(s):  
FENG-QI ZHAO ◽  
JIAN GONG
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
Quantum Wells ◽  
Ground State ◽  
Quantum Confinement Effect ◽  
Energy Levels ◽  
Binding Energies ◽  
Hydrogenic Impurity ◽  
Dependent Mass ◽  
Parabolic Quantum Wells

The ground state and binding energies of the hydrogenic impurity in a finite GaN/Al x Ga 1-x N parabolic quantum well (PQW) are investigated by using variational method. The effect of an electric field and spatial dependence effective mass (SDEM) are considered in the calculation. The results indicate that the effect of the SDEM on the energy levels is more obvious in the case of the narrower well width L. The effects decrease with increasing L, and tend to zero. The electric field shifts the energy levels towards lower energies with increasing well width L. Furthermore the ground state binding energy of the hydrogenic impurity in GaN/Al x Ga 1-x N PQWs is larger than that in GaAs/Al x Ga 1-x As PQWs. Therefore, we affirm that there is stronger quantum confinement effect in GaN/Al x Ga 1-x N PQW.

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