Mode‐locked coupled‐stripe quantum well laser operation (λ∼7350 Å) in a tunable (Δℏω∼37 meV>kT) external grating cavity

1985 ◽  
Vol 47 (10) ◽  
pp. 1022-1023 ◽  
Author(s):  
J. E. Epler ◽  
G. S. Jackson ◽  
N. Holonyak ◽  
M. Weinstein ◽  
R. D. Burnham ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Operation ◽  
Quantum Well Laser

Quantum well laser operation at low temperature in strong magnetic fields

1983 ◽  
Vol 48 (8) ◽  
pp. 671-673 ◽  
Author(s):  
P. Gavrilovic ◽  
K. Hess ◽  
N. Holonyak ◽  
R.D. Burnham ◽  
T.L. Paoli ◽  
...  
Keyword(s):  
Low Temperature ◽  
Magnetic Fields ◽  
Quantum Well ◽  
Laser Operation ◽  
Strong Magnetic Fields ◽  
Quantum Well Laser

Variable resonator (variableQ) photopumped phonon‐assisted quantum well laser operation

1990 ◽  
Vol 56 (1) ◽  
pp. 60-62 ◽  
Author(s):  
N. Holonyak ◽  
D. W. Nam ◽  
E. J. Vesely ◽  
L. J. Guido ◽  
P. Gavrilovic ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Operation ◽  
Quantum Well Laser

scholarly journals The Coupled Optoelectronic Problems of Quantum Well Laser Operation

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 355-362 ◽  
Author(s):  
Matt Grupen ◽  
Karl Hess
Keyword(s):  
Quantum Well ◽  
Laser Operation ◽  
Quantum Well Laser ◽  
Carrier Scattering ◽  
Laser Simulation ◽  
Transport Carrier ◽  
Simulation Results ◽  
Bulk Transport

The treatment of several aspects of quantum well laser simulation are discussed in terms of the Minilase-II simulator. The discussion involves the optical problem and several components of the electronic problem, including bulk transport, carrier scattering into and within the quantum well, and the nonequilibrium LO phonon temperature within the well. Descriptions of these problems are followed by simulation results which show the ways in which they each affect the laser characteristics.

(InAs)1/(GaAs)2short period superlattice strained single quantum well laser on GaAs substrate

1993 ◽  
Vol 29 (1) ◽  
pp. 98-99 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
H. Soda ◽  
S. Yamazaki
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

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