Rapid thermal annealing of Si implanted GaAs for power field‐effect transistors

1985 ◽  
Vol 47 (2) ◽  
pp. 120-122 ◽  
Author(s):  
H. Kanber ◽  
W. B. Henderson ◽  
R. C. Rush ◽  
M. Siracusa ◽  
J. M. Whelan
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Field Effect ◽  
Field Effect Transistors

Contact Engineering of Molybdenum Ditelluride Field Effect Transistors through Rapid Thermal Annealing

2017 ◽  
Vol 9 (35) ◽  
pp. 30107-30114 ◽  
Author(s):  
Jiancui Chen ◽  
Zhihong Feng ◽  
Shuangqing Fan ◽  
Sigang Shi ◽  
Yuchen Yue ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Contact Engineering

scholarly journals Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

2011 ◽  
Vol 2011 ◽  
pp. 1-16 ◽  
Author(s):  
Jianshi Tang ◽  
Chiu-Yen Wang ◽  
Faxian Xiu ◽  
Yi Zhou ◽  
Lih-Juann Chen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Field Effect ◽  
High Performance ◽  
Lattice Mismatch ◽  
Field Effect Transistors ◽  
Single Crystalline ◽  
Nanowire Transistors ◽  
Nanowire Heterostructures

We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demonstrated a wide temperature range of 400~500°C to convert the Ge nanowire to a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure with atomically sharp interfaces. More importantly, we studied the effect of oxide confinement during the formation of nickel germanides in a Ge nanowire. In contrast to the formation of Ni2Ge/Ge/Ni2Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni2Ge with the confinement of Al2O3during annealing. A twisted epitaxial growth mode was observed in both two Ge nanowire heterostructures to accommodate the large lattice mismatch in the NixGe/Ge interface. Moreover, we have demonstrated field-effect transistors using the nickel germanide regions as source/drain contacts to the Ge nanowire channel. Our Ge nanowire transistors have shown a high-performancep-type behavior with a high on/off ratio of 105and a field-effect hole mobility of 210 cm2/Vs, which showed a significant improvement compared with that from unreacted Ge nanowire transistors.

Rapid-thermal-annealing surface treatment for restoring the intrinsic properties of graphene field-effect transistors

2013 ◽  
Vol 24 (40) ◽  
pp. 405301 ◽  
Author(s):  
Chan Wook Jang ◽  
Ju Hwan Kim ◽  
Jong Min Kim ◽  
Dong Hee Shin ◽  
Sung Kim ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Intrinsic Properties

Disubstituted perylene diimides in organic field-effect transistors: Effect of the alkyl side chains and thermal annealing on the device performance

2018 ◽  
Vol 58 ◽  
pp. 257-262 ◽  
Author(s):  
Lidiya I. Kuznetsova ◽  
Alexey A. Piryazev ◽  
Denis V. Anokhin ◽  
Alexander V. Mumyatov ◽  
Diana K. Susarova ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Device Performance ◽  
Side Chains ◽  
Organic Field Effect Transistors ◽  
Perylene Diimides ◽  
Alkyl Side Chains

scholarly journals Effect of vacuum thermal annealing to encapsulated graphene field effect transistors

2016 ◽  
Vol 34 (4) ◽  
pp. 041805 ◽  
Author(s):  
Konstantinos Alexandrou ◽  
Filippos Farmakis ◽  
Alexandros Arapis ◽  
Nikolaos Georgoulas ◽  
Yufeng Hao ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Field Effect ◽  
Field Effect Transistors
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