Magnesium doping of efficient GaAs and Ga0.75In0.25As solar cells grown by metalorganic chemical vapor deposition

1984 ◽  
Vol 45 (8) ◽  
pp. 895-897 ◽  
Author(s):  
C. R. Lewis ◽  
C. W. Ford ◽  
J. G. Werthen
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Magnesium Doping ◽  
Metalorganic Chemical

Textured ZnO Thin Films for Solar Cells Grown by Metalorganic Chemical Vapor Deposition

1991 ◽  
Vol 30 (Part 2, No. 3B) ◽  
pp. L441-L443 ◽  
Author(s):  
Wilson W. Wenas ◽  
Akira Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Zno Thin Films ◽  
Metalorganic Chemical

Magnesium Doping of GaN by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
Hongqiang Lu ◽  
Ishwara Bhat
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Base Layer ◽  
Magnesium Doping ◽  
Acceptor Concentration ◽  
P Type ◽  
Metalorganic Chemical

ABSTRACTP-type GaN films were grown on sapphire substrates in a horizontal metalorganic chemical vapor deposition system using (C5H5)2Mg (Cp2Mg) as the p-dopant source. It is found that the acceptor concentration in the post-growth annealed GaN samples increases with the Mg flow rate and reaches a peak value of 1×1019 cm−3 at Mg flow rate of 0.84 ĉmol/min. The films remain semi-insulating even after annealing when the Mg flow rate is higher than 1.08 ĉmol/min. The effects of annealing temperature and duration on the electrical properties of GaN are also investigated. The results confirm that a 800 °C, 30 minutes post-growth annealing in N2 ambient is sufficient to activate most of the Mg atoms. In addition, study of rapid thermal annealing of Mg-doped GaN was carried out and the results show that the p-type acceptor concentration obtained is comparable to the results obtained using furnace annealing process. Finally, GaN light emitting diodes (LEDs) are demonstrated using undoped layer as the n-type base layer in a p-on-n structure. The light emission spectra are dominated by the 430 nm peak, accompanied with two relatively weak peaks located at 380nm and 550nm.

Sign in / Sign up

Export Citation Format

Share Document