Nonelastic acoustic‐phonon‐electron interactions in Monte‐Carlo simulations at low fields

1984 ◽  
Vol 45 (6) ◽  
pp. 641-643 ◽  
Author(s):  
F. Hesto ◽  
J‐L. Pelouard ◽  
R. Castagné ◽  
J‐F. Pône
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Acoustic Phonon ◽  
Electron Interactions

scholarly journals Monte Carlo Simulation of Hall Effect in n-Type GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 570-575 ◽  
Author(s):  
J.D. Albrecht ◽  
P.P. Ruden ◽  
E. Bellotti ◽  
K.F. Brennan
Keyword(s):  
Monte Carlo ◽  
Low Temperature ◽  
Monte Carlo Simulations ◽  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Liquid Nitrogen Temperature ◽  
Inelastic Process ◽  
Polar Optical Phonon ◽  
Wurtzite Phase ◽  
Hall Factor

Results of Monte Carlo simulations of electron transport for wurtzite phase GaN in crossed, weak electric and magnetic fields are presented. It is found that the Hall factor, rH = μHall/μdrift, decreases monotonically as the temperature increases from 77K to 400K.The low temperature value of the Hall factor increases significantly with increasing doping concentration. The Monte Carlo simulations take into account the electron-lattice interaction through polar optical phonon scattering, deformation potential acoustic phonon scattering (treated as an inelastic process), and piezoelectric acoustic phonon scattering. Impurity scattering due to ionized and neutral donors is also included, with the latter found to be important at low temperature due to the relatively large donor binding energy which implies considerable carrier freeze-out already at liquid nitrogen temperature. The temperature dependences of the electron concentration, drift mobility, and Hall factor are calculated for donor concentrations equal to 5 × 1016 cm−3, 1017 cm−3, and 5 × 1017 cm−3. The Monte Carlo simulations are compared to classical analytical results obtained using the relaxation-time approximation, which is found to be adequate at low temperatures and sufficiently low carrier concentrations so that inelastic scattering effects due to optical phonons and degeneracy effects are negligible. The influence of dislocations on the Hall factor is discussed briefly.

Monte Carlo Simulation of Hall Effect in n-Type GaN

1998 ◽  
Vol 537 ◽  
Author(s):  
J.D. Albrecht ◽  
P.P. Ruden ◽  
E. Bellotti ◽  
K.F. Brennan
Keyword(s):  
Monte Carlo ◽  
Low Temperature ◽  
Monte Carlo Simulations ◽  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Liquid Nitrogen Temperature ◽  
Inelastic Process ◽  
Polar Optical Phonon ◽  
Wurtzite Phase ◽  
Hall Factor

AbstractResults of Monte Carlo simulations of electron transport for wurtzite phase GaN in crossed, weak electric and magnetic fields are presented. It is found that the Hall factor, τH = μHall/μdrift, decreases monotonically as the temperature increases from 77K to 400K. The low temperature value of the Hall factor increases significantly with increasing doping concentration. The Monte Carlo simulations take into account the electron-lattice interaction through polar optical phonon scattering, deformation potential acoustic phonon scattering (treated as an inelastic process), and piezoelectric acoustic phonon scattering. Impurity scattering due to ionized and neutral donors is also included, with the latter found to be important at low temperature due to the relatively large donor binding energy which implies considerable carrier freeze-out already at liquid nitrogen temperature. The temperature dependences of the electron concentration, drift mobility, and Hall factor are calculated for donor concentrations equal to 5 × 1016 cm-3, 1017 cm-3, and 5 × 1017 cm-3. The Monte Carlo simulations are compared to classical analytical results obtained using the relaxation-time approximation, which is found to be adequate at low temperatures and sufficiently low carrier concentrations so that inelastic scattering effects due to optical phonons and degeneracy effects are negligible. The influence of dislocations on the Hall factor is discussed briefly.

Low-voltage EDS of magnesium ferrite Dendrites in a FEG-SEM

1996 ◽  
Vol 54 ◽  
pp. 478-479
Author(s):  
Matthew T. Johnson ◽  
Ian M. Anderson ◽  
Jim Bentley ◽  
C. Barry Carter
Keyword(s):  
Monte Carlo ◽  
Quantitative Analysis ◽  
Monte Carlo Simulations ◽  
Cross Section ◽  
Spatial Resolution ◽  
Low Voltage ◽  
Magnesium Ferrite ◽  
X Ray ◽  
Interaction Volume ◽  
Ferrite Spinel

Energy-dispersive X-ray spectrometry (EDS) performed at low (≤ 5 kV) accelerating voltages in the SEM has the potential for providing quantitative microanalytical information with a spatial resolution of ∼100 nm. In the present work, EDS analyses were performed on magnesium ferrite spinel [(MgxFe1−x)Fe2O4] dendrites embedded in a MgO matrix, as shown in Fig. 1. spatial resolution of X-ray microanalysis at conventional accelerating voltages is insufficient for the quantitative analysis of these dendrites, which have widths of the order of a few hundred nanometers, without deconvolution of contributions from the MgO matrix. However, Monte Carlo simulations indicate that the interaction volume for MgFe2O4 is ∼150 nm at 3 kV accelerating voltage and therefore sufficient to analyze the dendrites without matrix contributions.Single-crystal {001}-oriented MgO was reacted with hematite (Fe2O3) powder for 6 h at 1450°C in air and furnace cooled. The specimen was then cleaved to expose a clean cross-section suitable for microanalysis.

MONTE CARLO SIMULATIONS OF ELECTRON DRIFT VELOCITIES IN THE NOBLE GASES AND THEIR MIXTURES

1979 ◽  
Vol 40 (C7) ◽  
pp. C7-63-C7-64
Author(s):  
A. J. Davies ◽  
J. Dutton ◽  
C. J. Evans ◽  
A. Goodings ◽  
P.K. Stewart
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Noble Gases ◽  
Electron Drift
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