Electroabsorption spectroscopy of well and barrier materials in amorphous semiconductor superlattices

1984 ◽  
Vol 45 (10) ◽  
pp. 1132-1134 ◽  
Author(s):  
C. B. Roxlo ◽  
B. Abeles ◽  
P. D. Persans
Keyword(s):  
Amorphous Semiconductor ◽  
Semiconductor Superlattices ◽  
Barrier Materials ◽  
Electroabsorption Spectroscopy

Amorphous Semiconductor Superlattices

1983 ◽  
Vol 51 (21) ◽  
pp. 2003-2006 ◽  
Author(s):  
B. Abeles ◽  
T. Tiedje
Keyword(s):  
Amorphous Semiconductor ◽  
Semiconductor Superlattices

Bandgap and resistivity of amorphous semiconductor superlattices

1984 ◽  
Vol 66 (1-2) ◽  
pp. 345-350 ◽  
Author(s):  
T. Tiedje ◽  
B. Abeles ◽  
P.D. Persans ◽  
B.G. Brooks ◽  
G.D. Cody
Keyword(s):  
Amorphous Semiconductor ◽  
Semiconductor Superlattices

Amorphous semiconductor superlattices

1985 ◽  
Vol 1 (2) ◽  
pp. 115-118 ◽  
Author(s):  
B. Abeles ◽  
T. Tiedje ◽  
H.C. Stasiewski ◽  
H.W. Deckman ◽  
P.D. Persans ◽  
...  
Keyword(s):  
Amorphous Semiconductor ◽  
Semiconductor Superlattices

Preparation of TEM Sections using Natural Lithography

1990 ◽  
Vol 199 ◽  
Author(s):  
H. W. Deckman ◽  
J. H. Dunsmuir
Keyword(s):  
Colloidal Particles ◽  
Chemical Properties ◽  
Amorphous Semiconductor ◽  
Semiconductor Superlattices ◽  
Statistical Characterization ◽  
Metal Chalcogenide ◽  
Sample Structure ◽  
Layered Transition Metal ◽  
And Chemical Properties

ABSTRACTWe have developed and used a simple lithographic technique that allows preparation of TEM sections from a variety of materials in 10–45 minutes. To obtain TEM sections, 50–5,000 Å diameter cylindrical post structures are microfabricated on the surface of the sample using colloidal particles as an etch mask. The technique simultaneously prepares 104 – 108 posts. This not only allows a statistical characterization of sample structure but also provides enough material for studies of the electronic, spectroscopic and chemical properties of edge sites exposed on the post surfaces. These lithographically prepared posts have been used to study the structure of materials as diverse as a layered transition metal chalcogenide catalysts, semi-insulating polysilicon, amorphous semiconductor superlattices, crystalline metallic and semiconductor superlattices, and molecular-scale microporous superlattices.

Phonons in amorphous semiconductor superlattices

1985 ◽  
Vol 31 (8) ◽  
pp. 5577-5579 ◽  
Author(s):  
N. Maley ◽  
J. S. Lannin
Keyword(s):  
Amorphous Semiconductor ◽  
Semiconductor Superlattices

Metastable Electronic Effects in Amorphous Semiconductor Superlattices

1989 ◽  
Vol 160 ◽  
Author(s):  
J. Kakalios
Keyword(s):  
Scattering Length ◽  
Lattice Relaxation ◽  
Amorphous Semiconductor ◽  
Amorphous Semiconductors ◽  
Electronic Effects ◽  
Semiconductor Superlattices ◽  
Quantum Size ◽  
In Doping ◽  
Dx Center ◽  
A Charge

AbstractThis paper reviews some of the novel electronic effects observed in amorphous semiconductor superlattices. Quantum size effects have been reported in compositionally modulated amorphous semiconductors based upon optical absorption and tunneling studies. However, the quantum well effects are in direct conflict with transport data estimates of the inelastic scattering length. In doping modulated amorphous semiconductors, a large persistent photoconductivity PPC is observed, which cannot be explained by the field separation model alone, but rather requires the presence of a defect which undergoes a large lattice relaxation upon trapping a charge (similar to the DX center). Studies of npnp amorphous silicon multilayers have enabled a microscopic determination of the process responsible for PPC.

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