Electronic and optical properties ofp‐type amorphous silicon and wide band‐gap amorphous silicon carbide films prepared by photochemical vapor deposition

1984 ◽  
Vol 44 (9) ◽  
pp. 871-873 ◽  
Author(s):  
Takeshi Inoue ◽  
Tatsuya Tanaka ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Vapor Deposition ◽  
Wide Band ◽  
Wide Band Gap ◽  
Amorphous Silicon Carbide ◽  
Electronic And Optical Properties ◽  
Photochemical Vapor Deposition

Ab initio calculations of electronic and optical properties in O-doped LiF crystal

Open Physics ◽  
2008 ◽  
Vol 6 (2) ◽  
Author(s):  
Meili Guo ◽  
Xiaodong Zhang ◽  
Hongen Gu ◽  
Na Wang
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Optical Constants ◽  
Wide Band ◽  
Low Energy ◽  
Experimental Result ◽  
First Principle ◽  
Wide Band Gap ◽  
Electronic And Optical Properties

AbstractWe present a first-principle study of electronic and optical properties in pure LiF and O-doped LiF crystals. The pure LiF crystal exhibits a wide band gap while the O-doped LiF crystal shows the less band gap due to the contribution of O 2p. Some optical constants, such as dielectric functions, reflectivity and the refractive index, have been performed. The calculated reflectivity and refractive index from the pure LiF crystal agree with the experimental and recently calculated results in the low-energy range. Meanwhile, the optical properties have also been predicted from the O-doped LiF crystal. The absorption band in 200 nm has been observed, which is relatively close to the experimental result.

scholarly journals Stable sandwich structures of two-dimensional iron borides FeBxalloy: a first-principles calculation

RSC Advances ◽  
2017 ◽  
Vol 7 (48) ◽  
pp. 30320-30326 ◽  
Author(s):  
Shao-Gang Xu ◽  
Yu-Jun Zhao ◽  
Xiao-Bao Yang ◽  
Hu Xu
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
First Principles ◽  
Sandwich Structures ◽  
Wide Band ◽  
First Principles Calculation ◽  
Two Dimensional ◽  
Wide Band Gap ◽  
Electronic And Optical Properties ◽  
Wide Band Gap Semiconductors

Multilayer iron borides FeBx(x= 4, 6, 8, 10) are wide-band-gap semiconductors; the electronic and optical properties of these semiconductors may be modulated by biaxial strains.

scholarly journals Optical Properties of Wide Band Gap Indium Sulphide Thin Films Obtained by Physical Vapor Deposition

2001 ◽  
Vol 184 (1) ◽  
pp. 179-186 ◽  
Author(s):  
N. Barreau ◽  
S. Marsillac ◽  
J.C. Bern�de ◽  
T. Ben Nasrallah ◽  
S. Belgacem
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Wide Band ◽  
Wide Band Gap ◽  
Indium Sulphide

Electronic and optical properties of wide band gap Tl3TaS4: A promising surface acoustic wave material

2020 ◽  
Vol 99 ◽  
pp. 109601
Author(s):  
Tuan V. Vu ◽  
A.A. Lavrentyev ◽  
B.V. Gabrelian ◽  
K.F. Kalmykova ◽  
V.V. Sidorkin ◽  
...  
Keyword(s):  
Optical Properties ◽  
Acoustic Wave ◽  
Band Gap ◽  
Surface Acoustic Wave ◽  
Wide Band ◽  
Wide Band Gap ◽  
Electronic And Optical Properties

scholarly journals The influence of calcination temperature on structural and optical properties of ZnO nanoparticles via simple polymer synthesis route

2017 ◽  
Vol 49 (3) ◽  
pp. 263-275 ◽  
Author(s):  
Ibrahim Alibe ◽  
Amin Matori ◽  
Elias Saion ◽  
Alibe Ali ◽  
Mohd Zaid
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Calcination Temperature ◽  
Wide Band ◽  
Polymer Synthesis ◽  
Structural And Optical Properties ◽  
Zno Nps ◽  
Wide Band Gap ◽  
Hexagonal Shape ◽  
Particle Size Increase

A simple polymer synthesis was used to successfully synthesized Zinc Oxide Nanoparticles (ZnO NPs), and the influence of the different calcination temperature on the structural, and optical properties of the material was observed using several techniques. The formation of ZnO NPs was confirmed by FT?IR, EDX, XRD, FESEM and TEM images upon calcination from 500?750?C. The FESEM images showed the ZNO NPs synthesized possessed a hexagonal shape and tended to become larger at higher calcination temperature. The XRD and FTIR revealed the precursor to be amorphous at room temperature but transform to a crystalline structure during the process of calcination. The crystalline and particle size increase as the temperature was increased. The crystalline size was between 24?49 nm for all samples calcined at 500?750?C. The optical properties obtained by UV?vis reflectance spectrometer have further confirmed the formation of ZnO NPs. The band gap exhibits typical ZnO wide band gap, and the values decrease with an increase in calcination temperature.

scholarly journals Solid solubility of rare earth elements (Nd, Eu, Tb) in In2−xSnxO3 – effect on electrical conductivity and optical properties

2014 ◽  
Vol 43 (25) ◽  
pp. 9620-9632 ◽  
Author(s):  
T. O. L. Sunde ◽  
M. Lindgren ◽  
T. O. Mason ◽  
M.-A. Einarsrud ◽  
T. Grande
Keyword(s):  
Electrical Conductivity ◽  
Optical Properties ◽  
Rare Earth ◽  
Rare Earth Elements ◽  
Band Gap ◽  
Solid Solubility ◽  
Wide Band ◽  
Wide Band Gap ◽  
Recent Interest ◽  
Wide Band Gap Semiconductors

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.

High Temperature Silicon Carbide CMOS Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Band Gap ◽  
High Temperatures ◽  
Wide Band ◽  
Cmos Technology ◽  
Cmos Integrated Circuits ◽  
Wide Band Gap ◽  
Circuit Performance

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

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