High efficiency inversion layer solar cells based on ionizing radiation‐induced surface inversion

1984 ◽  
Vol 44 (6) ◽  
pp. 596-598
Author(s):  
Yoshi Okuyama ◽  
T‐P. Ma
2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Xuegong Yu ◽  
Xinlei Shen ◽  
Xinhui Mu ◽  
Jie Zhang ◽  
Baoquan Sun ◽  
...  

1980 ◽  
Vol 1 (5) ◽  
pp. 79-80 ◽  
Author(s):  
R.E. Thomas ◽  
R.B. North ◽  
C.E. Norman

2001 ◽  
Vol 668 ◽  
Author(s):  
A. Jasenek ◽  
A. Boden ◽  
K. Weinert ◽  
M. R. Balboul ◽  
H. W. Schock ◽  
...  

ABSTRACTWe investigate radiation-induced defects in high-efficiency Cu(In,Ga)Se2/CdS/ZnO heterojunction solar cells after 1-MeV electron and 4-MeV proton irradiation. We use electron and proton fluences of more than 1018 cm−2 and up to 1014 cm−2, respectively. The irradiation experiments performed at three independent electron irradiation facilities consistently prove the superior radiation resistance of these Cu(In,Ga)Se2 devices compared to other types of solar cells. The reduction of the solar cell efficiency in all experiments is predominantly caused by a loss ΔVOC of the open circuit voltage VOC. An analytical model describes ΔVOC in terms of radiation-induced defects enhancing recombination in the Cu(In,Ga)Se2 absorber material. From our model we extract the defect introduction rates for recombination centers in Cu(In,Ga)Se2 for the respective particles and energies. Isochronal annealing steps fully recover VOC of the irradiated Cu(In,Ga)Se2 solar cells. Exposure to temperatures of approx. 400 K are sufficient to restore the initial VOC within less than 5 %, even after excessive irradiation. The annealing process displays an activation energy of EA = 1.1 eV. Admittance spectroscopy directly reveals the generation and the annealing of radiation-induced defects.


Author(s):  
M. L. Knotek

Modern surface analysis is based largely upon the use of ionizing radiation to probe the electronic and atomic structure of the surfaces physical and chemical makeup. In many of these studies the ionizing radiation used as the primary probe is found to induce changes in the structure and makeup of the surface, especially when electrons are employed. A number of techniques employ the phenomenon of radiation induced desorption as a means of probing the nature of the surface bond. These include Electron- and Photon-Stimulated Desorption (ESD and PSD) which measure desorbed ionic and neutral species as they leave the surface after the surface has been excited by some incident ionizing particle. There has recently been a great deal of activity in determining the relationship between the nature of chemical bonding and its susceptibility to radiation damage.


Author(s):  
Toshihiro Kinoshita ◽  
Daisuke Ide ◽  
Yasufumi Tsunomura ◽  
Shigeharu Taira ◽  
Toshiaki Baba ◽  
...  
Keyword(s):  

2018 ◽  
Author(s):  
Henk Bolink ◽  
Lidon Gil-Escrig ◽  
Pablo P. Boix ◽  
Cristina Momblona ◽  
Jorge Avila ◽  
...  

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