Reduction of silicon‐aluminum interdiffusion by improved semiconductor surface ordering

1984 ◽  
Vol 44 (1) ◽  
pp. 110-112 ◽  
Author(s):  
L. J. Brillson ◽  
M. L. Slade ◽  
A. D. Katnani ◽  
M. Kelly ◽  
G. Margaritondo
Keyword(s):  
Semiconductor Surface ◽  
Surface Ordering

scholarly journals Mercury-Mediated Organic Semiconductor Surface Doping Monitored by Electrolyte-Gated Field-Effect Transistors

2017 ◽  
Vol 27 (46) ◽  
pp. 1703899 ◽  
Author(s):  
Qiaoming Zhang ◽  
Francesca Leonardi ◽  
Stefano Casalini ◽  
Marta Mas-Torrent
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Surface ◽  
Surface Doping

scholarly journals Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Jinchao Tong ◽  
Fei Suo ◽  
Tianning Zhang ◽  
Zhiming Huang ◽  
Junhao Chu ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
High Performance ◽  
Room Temperature ◽  
Spectral Band ◽  
High Capacity ◽  
Terahertz Wave ◽  
Semiconductor Surface ◽  
Wide Range ◽  
Low Sensitivity ◽  
Air Interfaces

AbstractHigh-performance uncooled millimetre and terahertz wave detectors are required as a building block for a wide range of applications. The state-of-the-art technologies, however, are plagued by low sensitivity, narrow spectral bandwidth, and complicated architecture. Here, we report semiconductor surface plasmon enhanced high-performance broadband millimetre and terahertz wave detectors which are based on nanogroove InSb array epitaxially grown on GaAs substrate for room temperature operation. By making a nanogroove array in the grown InSb layer, strong millimetre and terahertz wave surface plasmon polaritons can be generated at the InSb–air interfaces, which results in significant improvement in detecting performance. A noise equivalent power (NEP) of 2.2 × 10−14 W Hz−1/2 or a detectivity (D*) of 2.7 × 1012 cm Hz1/2 W−1 at 1.75 mm (0.171 THz) is achieved at room temperature. By lowering the temperature to the thermoelectric cooling available 200 K, the corresponding NEP and D* of the nanogroove device can be improved to 3.8 × 10−15 W Hz−1/2 and 1.6 × 1013 cm Hz1/2 W−1, respectively. In addition, such a single device can perform broad spectral band detection from 0.9 mm (0.330 THz) to 9.4 mm (0.032 THz). Fast responses of 3.5 µs and 780 ns are achieved at room temperature and 200 K, respectively. Such high-performance millimetre and terahertz wave photodetectors are useful for wide applications such as high capacity communications, walk-through security, biological diagnosis, spectroscopy, and remote sensing. In addition, the integration of plasmonic semiconductor nanostructures paves a way for realizing high performance and multifunctional long-wavelength optoelectrical devices.

Sign in / Sign up

Export Citation Format

Share Document