Localization induced electron‐hole transition rate enhancement in GaAs quantum wells

1984 ◽  
Vol 44 (1) ◽  
pp. 84-86 ◽  
Author(s):  
J. Christen ◽  
D. Bimberg ◽  
A. Steckenborn ◽  
G. Weimann
Keyword(s):  
Quantum Wells ◽  
Transition Rate ◽  
Electron Hole ◽  
Rate Enhancement ◽  
Hole Transition

Effect of well thickness on the two-dimensional electron-hole system inAlxGa1−xSb/InAs quantum wells

1997 ◽  
Vol 55 (20) ◽  
pp. 13677-13681 ◽  
Author(s):  
Ikai Lo ◽  
Jih-Chen Chiang ◽  
Shiow-Fon Tsay ◽  
W. C. Mitchel ◽  
M. Ahoujja ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Hole

scholarly journals Cooperative recombination of electron-hole pairs in semiconductor quantum wells under quantizing magnetic fields

2010 ◽  
Vol 81 (15) ◽  
Author(s):  
Y. D. Jho ◽  
X. Wang ◽  
D. H. Reitze ◽  
J. Kono ◽  
A. A. Belyanin ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Electron Hole ◽  
Semiconductor Quantum Wells
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